High-efficiency, high-power mid-infrared quantum cascade lasers [Invited]

Botez, D.; Kirch, Jeremy; Boyle, Colin; Oresick, K.; Sigler, C.; Kim, Honghyuk; Knipfer, B.; Ryu, Jin-Sook; Lindberg, D.; Earles, T.; Mawst, Luke J.; Flores, Yuri V.

doi:10.1364/ome.8.001378

Cited by 68 publications

(31 citation statements)

References 37 publications

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“…The observed compositional grading at the interface could either result from; (a) surface segregation at the growth front during the layer growth or growth pause between SL layers [10,11], and/or (b) solid-state diffusion during the growth of subsequent layers, due to continued annealing as the structure is grown. Based on the growth rates in Table 1, the growth of 40 stages within a typical QCL active region takes~6.42 hr (including the 5 s pause time in between each layer) [12]. Using the diffusivity determined for the thin-motif SL results in a 2 √ Dt diffusion distance of 1.8 nm for the first layer within the first stage of the active region, while the first layer in the 40th stage would exhibit a 2 √…”

Section: Extent Of Interfacial Mixing In the Thin-motif Samplementioning

confidence: 99%

Interfacial Mixing Analysis for Strained Layer Superlattices by Atom Probe Tomography

et al. 2018

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Quantum wells and barriers with precise thicknesses and abrupt composition changes at their interfaces are critical for obtaining the desired emission wavelength from quantum cascade laser devices. High-resolution X-ray diffraction and transmission electron microscopy are commonly used to calibrate and characterize the layers’ thicknesses and compositions. A complementary technique, atom probe tomography, was employed here to obtain a direct measurement of the 3-dimensional spatially-resolved compositional profile in two InxGa1−xAs/InyAl1−yAs III-V strained-layer superlattice structures, both grown at 605 °C. Fitting the measured composition profiles to solutions to Fick’s Second Law yielded an average interdiffusion coefficient of 3.5 × 10−23 m2 s−1 at 605 °C. The extent of interdiffusion into each layer determined for these specific superlattices was 0.55 nm on average. The results suggest that quaternary active layers will form, rather than the intended ternary compounds, in structures with thicknesses and growth protocols that are typically designed for quantum cascade laser devices.

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Section: Extent Of Interfacial Mixing In the Thin-motif Samplementioning

confidence: 99%

Interfacial Mixing Analysis for Strained Layer Superlattices by Atom Probe Tomography

et al. 2018

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“…2, b) для исследованных образцов дает значения характеристической температуры стабильности порогового тока T 0 порядка 150 K, плотности порогового тока при нулевой температуре j 0 = 0.9 kA/cm 2 . Полученные значения T 0 типичны для конструкций активной области с высоким уровнем легирования инжектора [23,24]. На основе анализа ватт-амперных характеристик определены значения дифференциальной эффективности (Slope efficiency) для различных температур.…”

Section: результаты и их обсуждениеunclassified

“…Аппроксимация температурной зависимости дифференциальной эффективности на основе обратно-экспоненциальной зависимости (Slope efficiency = const • exp(−T /T 1 )) [25] позволила определить значение характеристической температуры T 1 , которая составила порядка 450 K. Типичные значения T 1 составляют порядка 300−330 К для случая применения конструкции активной области с высоким уровнем легирования инжектора [23,26,27]. Таким образом, полученные в ходе исследования высокие значения T 1 характеризуют малую величину паразитной токовой утечки, обусловленную надбарьерным выбросом носи-телей заряда в непрерывный спектр [23]. Также проведены исследования максимально достижимой выходной оптической мощности при температуре 78 K (рис.…”

Section: результаты и их обсуждениеunclassified

Генерация Квантово-Каскадного Лазера С Тонкой Верхней Обкладкой

Бабичев¹,

Гладышев²,

Денисов³

et al. 2019

Журнал Технической Физики

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Experimental results on the manufacturing and study of the properties of 7-8 μm wavelength range injection quantum-cascade lasers (QCLs) with a waveguide with a thin top cladding layer based on indium phosphide are presented. The heterostructure is formed by molecular beam epitaxy on an InP substrate, with a In0.53Ga0.47As/Al0.48In0.52As active region. Lasing at a wavelength of 7.8 μm at a temperature of 300 K with a threshold current density of ~ 6 kA / cm2 is obtained. Characteristic temperature T0 and T1 values for the QCLs are about 150 K and 450 K, respectively. Obtained results confirm the promising design of the QCLs with a waveguide with a thin top cladding layer for detecting liquids and microfluidic devices development.

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“…Although it is difficult to obtain the K parameter directly from experiment, the product DK is more readily measured and has been determined to be in the range of 0.6-1.2 nm 2 for InGaAs/InAlAs interfaces. 9,16,[21][22][23] Reference 21 quotes values of K ¼ 6 nm and D ¼ 0.17 nm for the InGaAs/InAlAs interface grown on a (100) InP substrate by MBE. Somewhat lower D ¼ 0.115 nm and larger K ¼ 10.0 nm are deduced from performance analysis of MOVPE grown QCLs.…”

mentioning

confidence: 99%

“…Somewhat lower D ¼ 0.115 nm and larger K ¼ 10.0 nm are deduced from performance analysis of MOVPE grown QCLs. 23 While Ref. 17 shows that the K parameter can be anything between 5.5 nm and 18.5 nm depending on the MBE growth temperature.…”

mentioning

confidence: 99%

Reduced interface roughness scattering in InGaAs/InAlAs quantum cascade lasers grown on (411)A InP substrates

Semtsiv

Kurlov

Alcer

et al. 2018

Applied Physics Letters

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Lattice-matched InGaAs-InAlAs quantum cascade lasers were prepared to compare differences between using a (411)A InP substrate and a (100) InP substrate. The lasers grown on the (411)A substrate showed higher gain, lower threshold current density, higher slope efficiency, and twice the power efficiency compared to the otherwise-identical structure on the (100) substrate. This performance improvement is attributed to less interface roughness scattering at the heterointerfaces in the (411)A structure. The lower interface roughness scattering appears to result from the high-spatial frequency steps on the (411)A surface.

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High-efficiency, high-power mid-infrared quantum cascade lasers [Invited]

Cited by 68 publications

References 37 publications

Interfacial Mixing Analysis for Strained Layer Superlattices by Atom Probe Tomography

Interfacial Mixing Analysis for Strained Layer Superlattices by Atom Probe Tomography

Генерация Квантово-Каскадного Лазера С Тонкой Верхней Обкладкой

Reduced interface roughness scattering in InGaAs/InAlAs quantum cascade lasers grown on (411)A InP substrates

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