High efficiency, magnetron sputtered CdS/CdTe solar cells

Effects of CdCl2 Treatment on Physical Properties of CdTe/CdS Thin Film Solar Cell

“…It was observed in this experimental work that CdS thin films had a mixed structure of H (0 0 2) and C (1 1 1) for both techniques. So CdS has a polycrystalline behavior [20][21][22][30][31][32][33][34][35][36][37][38][39]. Preferred orientation is (0 0 2) and structure is hexagonal as shown in Figure 8.…”

Microstructure Analysis of Cdte/CDS Thin-Film Solar Cells for Optimization of Devices Fabricated at Low Temperature With Pulsed Laser Deposition

“…[1][2][3]This has prompted extensive research during the past two decades and exciting progress has been made with power conversion efficiencies up to 20% recently being achieved in thickfilm (thickness in the range of 3-8 μm) CdTe solar cells by constantly pushing up the key parameters of short circuit current J SC (>25 mA/cm 2 ), open circuit voltage V OC (>850 mV) and the fill factor FF (>75%). [4][5][6][7][8]The difficulties in further enhancing the performance of CdTe based solar cells is intimately associated to their polycrystalline structure that results in electron/hole recombination mechanisms. [8]Grain boundaries (GBs) within the polycrystalline CdTe films are sites for recombination and finding a way around this has posed certain difficulties.…”

“…[8]Grain boundaries (GBs) within the polycrystalline CdTe films are sites for recombination and finding a way around this has posed certain difficulties. [5,[9][10][11]Typical grain size for thickfilm CdTe is on the order of microns. The larger the grain size becomes the lower the chance of charge carrier recombination at these GBs.…”

Internal strain analysis of CdTe thin films deposited by pulsed DC magnetron sputtering

“…The advantages of magnetron sputtering include thin film uniformity, thin film density and the use of relatively low substrate temperatures. In magnetron sputtering using radio-frequency power supplies, thin films of CdTe are usually deposited at substrate temperatures of ~250 o C [6]- [8]. The thin films deposited by pulsed dc magnetron sputtering are susceptible to higher stress due to the relatively high energy of deposition.…”