High Efficiency Over 70% at 3.6-GHz InAlN/GaN HEMT Fabricated by Gate Recess and Oxidation Process for Low-Voltage RF Applications

Zhou, Yuwei; Mi, Minhan; Han, Yutong; Wang, Pengfei; Chen, Yilin; Liu, Jielong; Gong, Can; Yang, Mei; Zhang, Meng; Zhu, Qing; Ma, Xiaohua

doi:10.1109/ted.2022.3225762

Cited by 6 publications

(1 citation statement)

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“…Semiconductor materials find extensive applications in gas sensors. Among various semiconductor materials, InAlN with properties such as high temperature resistance [ 20 ], high pressure resistance [ 21 ], low power consumption [ 22 ], and low resistance [ 23 ] are highly favorable. Semiconductor gas sensors offer irreplaceable advantages in terms of low cost, compact size, rapid response, low power consumption, and improved sensitivity, making them suitable for home testing and personal use [ 24 , 25 , 26 ].…”

Section: Introductionmentioning

confidence: 99%

Growth and Characterization of Sputtered InAlN Nanorods on Sapphire Substrates for Acetone Gas Sensing

Horng,

Cho,

Chang

et al. 2023

Nanomaterials

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The demand for highly sensitive and selective gas sensors has been steadily increasing, driven by applications in various fields such as environmental monitoring, healthcare, and industrial safety. In this context, ternary alloy indium aluminum nitride (InAlN) semiconductors have emerged as a promising material for gas sensing due to their unique properties and tunable material characteristics. This work focuses on the fabrication and characterization of InAlN nanorods grown on sapphire substrates using an ultra-high vacuum magnetron sputter epitaxy with precise control over indium composition and explores their potential for acetone-gas-sensing applications. Various characterization techniques, including XRD, SEM, and TEM, demonstrate the structural and morphological insights of InAlN nanorods, making them suitable for gas-sensing applications. To evaluate the gas-sensing performance of the InAlN nanorods, acetone was chosen as a target analyte due to its relevance in medical diagnostics and industrial processes. The results reveal that the InAlN nanorods exhibit a remarkable sensor response of 2.33% at 600 ppm acetone gas concentration at an operating temperature of 350 °C, with a rapid response time of 18 s. Their high sensor response and rapid response make InAlN a viable candidate for use in medical diagnostics, industrial safety, and environmental monitoring.

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