High-efficiency photocathodes on the NEA-GaAs basis

Antonova, L. I.; Denissov, V.P.

doi:10.1016/s0169-4332(96)00702-7

Cited by 19 publications

(3 citation statements)

References 4 publications

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“…With high response sensitivity, low dark current, high spin polarization, high current density and concentrated electron emission energy, NEA GaAs photocathodes are widely used in weak light detection field and high-energy physics field [1][2][3][4][5][6]. However, the application of GaAs is limited by the spectral response wavelength range.…”

Section: Introductionmentioning

confidence: 99%

First principles calculations of the electronic structure and optical properties of (001), (011) and (111) Ga0.5Al0.5As surfaces

Yu¹,

Ge²,

Chang³

et al. 2013

Materials Science in Semiconductor Processing

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Section: Introductionmentioning

confidence: 99%

First principles calculations of the electronic structure and optical properties of (001), (011) and (111) Ga0.5Al0.5As surfaces

Yu¹,

Ge²,

Chang³

et al. 2013

Materials Science in Semiconductor Processing

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“…The white-light sensitivity was about 1500 lA/lm. More details of the sample preparation are given in [17,18]. Under these conditions the conduction band bottom lies below the vacuum level, so any electron in the conduction band has some probability to escape È Fig.…”

Section: Resultsmentioning

confidence: 99%

Surface Barrier Transmissivity Determination with Small Work Function Variation Method

Antonov¹,

Denissov²

1999

Phys. Scr.

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A new method of surface barrier transmissivity determination is proposed. It is based on the elementary mathematical processing of emitted electron energy distributions obtained at slightly di †erent work function values of the same sample. The basic assumptions are the constancy of the electron energy distribution before escape into vacuum, and the dependence of the transmissivity only on the di †erence of electron energy and the work function value. The method was applied to an opaque negative electron affinity GaAs photoemitter, and the energy dependence of the GaAs/Cs/O-vacuum interface barrier transmissivity was obtained. The knowledge of the transmissivity made it possible to determine the energy distribution of electrons before their escape into vacuum. The latter contains a great number of very low energy electrons, which can be explained with multiple reÑections at the GaAs-CsO and CsO-vacuum borders.

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“…4) Similar observations have been reported for GaN and InGaAs. 5,6) The NEA-GaAs has many advantages, such as high quantum efficiency, 7) high spin polarization, 1) small energy spreading, 8) and short pulse availability. 9) The use of GaAs/GaAsP strained superlattice structure to photocathode has been reported, 10,11) and the spin polarization reached ∼90%.…”

Section: Introductionmentioning

confidence: 99%

Study on surface processes and photoemission properties of NEA-GaAs after repetitive sequence of thermal pretreatment and NEA activation

Inagaki

Meguro

2020

Jpn. J. Appl. Phys.

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Photoemission properties of negative electron affinity (NEA)-GaAs(100) surface have been investigated in this work by repetitive sequence of the thermal pretreatment process and the NEA activation process with a combination of several temperature conditions and subsequent Cs and O2 supply procedures. After the specific thermal pretreatment cycles, the maximum quantum efficiency value increased, and two kinds of Cs-related adsorption structures were found. One of them enhances photoemission efficiency compared to an ordinary NEA activation process. The present results have established a remarkable improvement of photoemission.

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High-efficiency photocathodes on the NEA-GaAs basis

Cited by 19 publications

References 4 publications

First principles calculations of the electronic structure and optical properties of (001), (011) and (111) Ga0.5Al0.5As surfaces

First principles calculations of the electronic structure and optical properties of (001), (011) and (111) Ga0.5Al0.5As surfaces

Surface Barrier Transmissivity Determination with Small Work Function Variation Method

Study on surface processes and photoemission properties of NEA-GaAs after repetitive sequence of thermal pretreatment and NEA activation

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