High efficiency selective emitter cells using patterned ion implantation

Ion implantation of boric molecules for silicon solar cells

“…Nevertheless, the reason for the occurrence of the stacking faults is not clear since for implantation of phosphorous (e.g. [8]) and other higher mass species, which lead to an amorphization of the surface, no such behavior was observed.…”

“…After implantation of higher mass ions (like phosphorous) and subsequent annealing around 900°C no crystal defects were observed [8]. This behavior is associated with an amorphization of the near surface region during implantation and the recrystallization process via solid phase epitaxy (SPE) during subsequent annealing.…”

Ion Implantation for All-alumina IBC Solar Cells with Floating Emitter

“…Having both, n-and p-contacts, on the back side necessitates a structured doping which makes the fabrication of this cell concept quite complex. It has been shown that selective doping structures can be easily formed by ion implantation using shadow masks [1]. This process could help to reduce the fabrication complexity of IBC solar cells significantly.…”

Recombination processes in passivated boron-implanted black silicon emitters

“…It also provides higher uniformity and reproducibility, 24 reduces the number of processing steps by avoiding formation of dopant glass at the silicon surface, and finally, facilitates the formation of selective emitters. 25 Thus, the first part of this paper compares sheet resistance and reflectance in implanted and diffused emitters. In the second part, the same emitters are compared in terms of emitter saturation current performance and of recombination mechanisms.…”