Ion Implantation for All-alumina IBC Solar Cells with Floating Emitter

Müller, Ralph; Reichel, Christian; Benick, Jan; Hermle, Martin

doi:10.1016/j.egypro.2014.08.078

Cited by 24 publications

(14 citation statements)

References 10 publications

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“…It has been proved in experiment that Al 2 O 3 has superior passivation effect on boron‐doped p + FFE . We have shown the results in Figure a.…”

Section: Photon Absorption and Electrical Characteristics With Ffe Layermentioning

confidence: 60%

“…Up to now, ECN and Fraunhofer ISE have achieved the low‐cost FFE‐IBC solar cells with the top efficiencies of 21.1% and 22.4%, respectively . Relevant investigations have also made remarkable progress, for example, the high negative charge density of dielectric Al 2 O 3 has better passivation performance for the FFE layer, the p–n junction of the overlapping formation of the emitter and BSF diffusion zones leads to more carrier recombination, FFE‐IBC solar cells show less efficiency loss at low illumination intensity than standard p‐type H pattern cells, FFE‐IBC solar cells have higher conversion efficiency (Eff) than n‐type passivated emitter rear totally diffused (n‐PERT) cells under the same conditions …”

Section: Introductionmentioning

confidence: 99%

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High‐Efficiency Interdigitated Back Contact Silicon Solar Cells with Front Floating Emitter

Ding

Lin

Liu

et al. 2019

Physica Status Solidi (a)

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Silicon interdigitated back contact (IBC) solar cells with front floating emitter (FFE‐IBC) put forward a new carrier transport concept of “pumping effect” for minority carriers compared with traditional IBC solar cells with front surface field (FSF‐IBC). Herein, high‐performance FFE‐IBC solar cells are achieved theoretically combining superior crystalline silicon quality, front surface passivation, and shallow groove structure using 2D device model. The improvement of minority carrier transport capacity is realized in the conductive FFE layer through optimizing the doping concentration and junction depth. It is shown that the shallow groove on the rear side of FFE‐IBC solar cells can effectively enhance the carrier collection ability by means of minimizing the negative impact of undiffused gap or surface p–n junction. The high efficiency exceeding 25% can be realized on silicon FFE‐IBC solar cells with the novel cell structure and optimized cell parameters, where the back surface field and emitter region width can be made for the same with only a slight sacrifice of photocurrent density and conversion efficiency. It is demonstrated theoretically that the realization of high‐efficiency and low‐cost silicon IBC solar cells is feasible due to the increase of the module fabrication tolerance.

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“…It has been proved in experiment that Al 2 O 3 has superior passivation effect on boron‐doped p + FFE . We have shown the results in Figure a.…”

Section: Photon Absorption and Electrical Characteristics With Ffe Layermentioning

confidence: 60%

Section: Introductionmentioning

confidence: 99%

High‐Efficiency Interdigitated Back Contact Silicon Solar Cells with Front Floating Emitter

Ding

Lin

Liu

et al. 2019

Physica Status Solidi (a)

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“…3 shows the measured reverse current density for two IBC solar cells from the first and second batch under external reverse bias voltage. Additionally, an IBC cell with gap between emitter and BSF is shown [16]. The cell with gap has a large space charge region (SCR) all around the emitter which effectively inhibits the reverse current.…”

Section: Resultsmentioning

confidence: 99%

Analysis of n-type IBC solar cells with diffused boron emitter locally blocked by implanted phosphorus

Müller

Reichel

Schrof

et al. 2015

Solar Energy Materials and Solar Cells

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“…For these reasons, existing diffusion techniques are troublesome for the integrating process because in three‐dimensional structures, they are restricted by the diffusion direction. To solve this issue, different ion implantation processes using an accelerated voltage and mass analyzer have been reported by various researchers . Here, IBC solar cells were fabricated with a counter doping BSF using a pattern‐free doping process, to reduce the number of process steps, and thereby removing the isolation gap between the emitter and BSF regions.…”

Section: Resultsmentioning

confidence: 99%

Gapless point back surface field for the counter doping of large‐area interdigitated back contact solar cells using a blanket shadow mask implantation process

Kim

Lee

et al. 2017

Progress in Photovoltaics

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Gapless interdigitated back contact (IBC) solar cells were fabricated with phosphorous back surface field on a boron emitter, using an ion implantation process. Boron emitter (boron ion implantation) is counter doped by the phosphorus back surface field (BSF) (phosphorus ion implantation) without gap. The gapless process step between the emitter and BSF was compared to existing IBC solar cell with gaps between emitters and BSFs obtained using diffusion processes. We optimized the doping process in the phosphorous BSF and boron emitter region, and the implied V oc and contact resistance relationship of the phosphorous and boron implantation dose in the counter doped region was analyzed. We confirmed the shunt resistance of the gapless IBC solar cells and the possibility of shunt behavior in gapless IBC solar cells. The highly doped counter doped BSF led to a controlled junction breakdown at high reverse bias voltages of around 7.5 V. After the doping region was optimized with the counter doped BSF and emitter, a large-area (5 inch pseudo square) gapless IBC solar cell with a power conversion efficiency of 22.9% was made.

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Ion Implantation for All-alumina IBC Solar Cells with Floating Emitter

Cited by 24 publications

References 10 publications

High‐Efficiency Interdigitated Back Contact Silicon Solar Cells with Front Floating Emitter

High‐Efficiency Interdigitated Back Contact Silicon Solar Cells with Front Floating Emitter

Analysis of n-type IBC solar cells with diffused boron emitter locally blocked by implanted phosphorus

Gapless point back surface field for the counter doping of large‐area interdigitated back contact solar cells using a blanket shadow mask implantation process

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