High efficiency selective emitter enabled through patterned ion implantation

Low,; Gupta, Rajiv; Gossmann,; Mullin, Gerard E.; Yelundur,; Damiani,; Chandrasekaran,; Meier,; McPherson,; Rohatgi,

doi:10.1109/pvsc.2010.5614426

Cited by 38 publications

(21 citation statements)

References 9 publications

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“…The formation of the emitters using an ion implantation technique requires quite low ion doses for a short time in comparison to other doping techniques. The ion implantation can be useful for industrial applications as it offers certain benefits which are demonstrated well in [62]. The most important one is the formation of an accurate doping profile with a uniformly doped emitter.…”

Section: Ion Implanted Emitter Cellsmentioning

confidence: 99%

“…The fabrication of advanced cell structures (i.e., selective emitters) can be simplified by using the ion implantation process. The comfort and ease of cell processing with benefits such as reductions in process steps, improved blue response, edge isolation elimination, and a uniformly doped emitter can be formed by this ion implantation process [62]. Sunvia Inc. working in collaboration with Varian Semiconductor Equipment Associates (VSEA) [66] and the Georgia Institute of Technology has pioneered the ion-implantation technology.…”

Section: Ion Implanted Emitter Cellsmentioning

confidence: 99%

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Advancements in n‐Type Base Crystalline Silicon Solar Cells and Their Emergence in the Photovoltaic Industry

Rehman

Lee

2013

The Scientific World Journal

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The p-type crystalline silicon wafers have occupied most of the solar cell market today. However, modules made with n-type crystalline silicon wafers are actually the most efficient modules up to date. This is because the material properties offered by n-type crystalline silicon substrates are suitable for higher efficiencies. Properties such as the absence of boron-oxygen related defects and a greater tolerance to key metal impurities by n-type crystalline silicon substrates are major factors that underline the efficiency of n-type crystalline silicon wafer modules. The bi-facial design of n-type cells with good rear-side electronic and optical properties on an industrial scale can be shaped as well. Furthermore, the development in the industrialization of solar cell designs based on n-type crystalline silicon substrates also highlights its boost in the contributions to the photovoltaic industry. In this paper, a review of various solar cell structures that can be realized on n-type crystalline silicon substrates will be given. Moreover, the current standing of solar cell technology based on n-type substrates and its contribution in photovoltaic industry will also be discussed.

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Section: Ion Implanted Emitter Cellsmentioning

confidence: 99%

Section: Ion Implanted Emitter Cellsmentioning

confidence: 99%

Advancements in n‐Type Base Crystalline Silicon Solar Cells and Their Emergence in the Photovoltaic Industry

Rehman

Lee

2013

The Scientific World Journal

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“…These cells have been manufactured using a diffusion process. Just as with MOS, some significant advantages are being demonstrated by replacing this with ion implantation [22,23]. Some of the reason for this is illustrated in figure 12, which shows cross sectional TEMs of PV PN junctions formed by diffusion and by implantation.…”

Section: ) New Implant Applicationsmentioning

confidence: 99%

(Invited) Recent Developments in Ion Implantation

Renau¹

2011

ECS Trans.

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The last few years have seen significant developments in ion implantation: Commercial implanters are now available with cryogenic capabilities to enable significant reductions in implant induced crystal damage; Plasma doping tools are now extensively used in fabs; Modified sources and new chemistries have been developed that allow some implants to be replaced by more exotic molecular implants to enable simultaneous co-implants and minimize end of range damage; Today's implanters give better dopant placement performance than ever before.These changes have been driven by CMOS scaling challenges, particularly at 32nm and 22nm, along with changes in thermal processing and the emergence of new implant applications.Details of some of these developments are given along with some explanation of the changes that have made them necessary.

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“…Selective emitters can be made in a variety of ways, however some of these methods require multiple steps and are not economical for industrial use. There are several selective emitter approaches that are under industrial development for screen printed solar cells including doped silicon ink [2], implantation [3], emitter etch back [4] and laser doping [5].The laser doping method is unique in that it utilizes phosphosilicate glass (PSG) from the POCl3 diffusion as a dopant source for selective emitter creation beneath the Ag contacts. To the best of our knowledge the selectively doped region is not segmented in other works, it either runs the full length of the finger or is perpendicular to the fingers running the length of the wafer to achieve easier alignment [6].…”

Section: Introductionmentioning

confidence: 99%

Crystalline silicon solar cells with segmented selective emitter by ultraviolet laser doping

Renshaw

Upadhyaya

et al. 2012

2012 38th IEEE Photovoltaic Specialists Conference

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A solar cell design with a UV laser doped segmented selective emitter is reported. Several different laser settings are explored to determine the optimum power for this process and it is found that the pitch between the segmented n ++ regions is critical to the short circuit current (Jsc) of the cell. An increase of 0.4 mA/cm 2 is seen in the Jsc when the pitch is increased from 50 µm to 200 µm while maintaining the fill factor of 79%.

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High efficiency selective emitter enabled through patterned ion implantation

Cited by 38 publications

References 9 publications

Advancements in n‐Type Base Crystalline Silicon Solar Cells and Their Emergence in the Photovoltaic Industry

Advancements in n‐Type Base Crystalline Silicon Solar Cells and Their Emergence in the Photovoltaic Industry

(Invited) Recent Developments in Ion Implantation

Crystalline silicon solar cells with segmented selective emitter by ultraviolet laser doping

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