High-efficiency Si optical modulator using Cu travelling-wave electrode

Yang, Yan; Qing, Feng‐Ling; Yu, Mingbin; Tu, Xiaoguang; Rusli, Rusli; Lo, Guo‐Qiang

doi:10.1364/oe.22.029978

Cited by 49 publications

(17 citation statements)

References 29 publications

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“…3a. We compute the voltage according to equation 2 by using a SiO 2 dielectric layer and compare the result with that of typical Si modulators [93][94][95][96][97][98][99][100][101][102][103] based on p-n junctions or capacitors in the same range of voltages. By biasing SLG to |E F | > E ph /2, where absorption is small, a neff modulation ~2 x 10 −3 can be obtained [79].…”

Section: Graphene-based Modulatorsmentioning

confidence: 99%

“…Si photonics transmitters are mainly based on MZI modulators [124]. Depending on the ratio between the bit time, T BIT (the time duration of a single bit), and the transit time of the optical wave through the modulator, T T , modulators can be classified as lumped [70,77,93,94,105] or travelling wave [96][97][98][99]125]. T BIT is the reciprocal of the bit rate, defined as the number of bits per second.…”

Section: Graphene Integration On Sinmentioning

confidence: 99%

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Graphene-based integrated photonics for next-generation datacom and telecom

Romagnoli¹,

Sorianello²,

et al. 2018

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Graphene is an ideal material for optoelectronic applications. Its photonic properties give several advantages and complementarities over Si photonics. For example, graphene enables both electro-absorption and electro-refraction modulation with an electro-optical index change exceeding 10 −3 . It can be used for optical add-drop multiplexing with voltage control, eliminating the current dissipation used for the thermal detuning of microresonators, and for thermoelectric-based ultrafast optical detectors that generate a voltage without transimpedance amplifiers. Here, we present our vision for graphene-based integrated photonics. We review graphene-based transceivers and compare them with existing technologies. Strategies for improving power consumption, manufacturability and wafer-scale integration are addressed. We outline a roadmap of the technological requirements to meet the demands of the datacom and telecom markets. We show that graphene based integrated photonics could enable ultrahigh spatial bandwidth density , low power consumption for board connectivity and connectivity between data centres, access networks and metropolitan, core, regional and long-haul optical communications.Photonics is poised to play an increasingly important role in ICT ( Fig. 1a), since the fixed high capacity links are largely based on photonic technologies. Photonic devices need to support ultra-large bandwidth operation, for example, 200 Tb s−1 in a single fibre[9] and >10 Tb s −1 cm −2 in integrated Si photonics chips [10]. To achieve this, the key components of Si photonics, photodetectors and modulators, need very high performances in terms of speed (≥25 Gb s −1 ), footprint (<1 mm 2 ), insertion loss (<4 dB), manufacturability (>10 6 pieces per year) and power consumption (<1 pJ bit −1 ). To date, these requirements have not been fulfilled in one system [11]. Furthermore, in terms of production volumes, photonics is not yet comparable to microelectronics [12], even if the increase in demand for optical networks would, by 2021, lead to an average global Internet Protocol (IP) traffic of 3.3 ZB (zettabytes), corresponding to an average usage data rate of ~800 Tb s −1 (refs[13,14]). In the context of the IoT[7], other applications, including infrared (IR) sensors, biosensors, environmental sensors, metrology, quantum communications and machine vision, will require even larger production volumes [13,15].The telecom network can be divided into three segments: access, aggregation and core (Fig. 1a). The access network is the interface between subscribers and the immediate service provider. The aggregation network aggregates all the input data streams from tributary access networks, converging towards the higher-level core network. The aggregation network includes local and metropolitan networks, which then converge to regional networks. A local area network (LAN) interconnects computers within a limited area, such as a residence, school, laboratory, university or office building. A metropolitan area network (MAN) interconnects us...

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Section: Graphene-based Modulatorsmentioning

confidence: 99%

Section: Graphene Integration On Sinmentioning

confidence: 99%

Graphene-based integrated photonics for next-generation datacom and telecom

Romagnoli¹,

Sorianello²,

et al. 2018

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“…"Double-drive" push-pull configuration requires two driving signals for the two electrically isolated arms widely used in TWMs with GSGSG electrodes [7][8][9]25]. For double-drive push-pull driving, the RF voltages applied to the two arms have a relative π-phase difference [ Fig.…”

Section: Terminologymentioning

confidence: 99%

“…Balanced interferometers eliminate the need for thermal control, but conventional silicon traveling wave modulators (TWMs) are generally energy-hungry physically because they use driving voltages inefficiently and dissipate all remaining power at termination resistors. Their energy consumption to realize a phase shift of Δφ 0.1π per arm is usually 1-10 pJ∕bit [6][7][8][9][10][11]. This phase shift is the typical demonstration in the literature and is close to the short-reach interconnect requirement of 3.5 dB extinction ratio at quadrature point (Δφ 0.125π).…”

Section: Introductionmentioning

confidence: 99%

Single-drive high-speed lumped depletion-type modulators toward 10 fJ/bit energy consumption

Yang

Fang

et al. 2017

Photon. Res.

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Reduction of modulator energy consumption to 10 fJ∕bit is essential for the sustainable development of communication systems. Lumped modulators might be a viable solution if instructed by a complete theory system. Here, we present a complete analytical electro-optic response theory, energy consumption analysis, and eye diagrams on absolute scales for lumped modulators. Consequently the speed limitation is understood and alleviated by single-drive configuration, and comprehensive knowledge into the energy dependence on structural parameters significantly reduces energy consumption. The results show that silicon modulation energy as low as 80.8 and 21.5 fJ∕bit can be achieved at 28 Gbd under 50 and 10 Ω impedance drivers, respectively. A 50 Gbd modulation is also shown to be possible. The analytical models can be extended to lumped modulators on other material platforms and offer a promising solution to the current challenges of modulation energy reduction.

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“…Heaters are an attractive solution for phase shifting in silicon photonics due their simplicity of implementation and their compactness, compared to alternatives such as free-carrier modulators [1][2][3]. Although compact, heaters require bulky pads to connect them to external driver electronics.…”

Section: Introduction and Conceptmentioning

confidence: 99%