High-efficiency stripe-geometry InGaAsP DH lasers (λ = 1.3 µm) with chemically-etched mirrors

Abstract

Abstrucl-Stripe-geometry InGaAsP double heterojunction lasers with chemically-etched mirrors have been fabricated. External differential quantum efficiencies as high as -30% have been obtained for devices with two chemically-etched mirrors. Etched-mirror lasers with 25 pm wide stripes have threshold currents as low as 210mA (room-temperature, pulsed). The etched-mirror lasers are compared to cleaved-mirror devices prepared from the same wafer.

Chemical Etching of InGaAsP / InP DH Wafer

“…Such a result indicates that the chemicals unfortun-ately may not be used to fabricate the etched-mirror lasers in the InGaAsP/InP system. There have recently been reported InGaAsP/inP lasers with chemically etched mirrors by using the HCI: CH~COOH: H20~ (27)(28)(29) and Br2: CH3OH solution (30)(31)(32) as an etchant of the mirror definition. Miller and Iga (27,29) successfully fabricated InGaAsP/InP planar-stripe lasers emitting at ~ = 1.3 ~m by etching with a solution of the 1HCl: 2CHsCOOH: 1HeO2, where the contact stripe was aligned along the [110] direction to obtain vertical-mirror profile.…”

“…2(E) and 4(C)]. Wright, Nelson, and Celia (30,31) also fabricated InGaAsP/InP DH lasers (~ = 1.3 urn) by a batch process which incorporates chemically etched (011) mirrors defined by the 0.2% by volume Br~: CH8OH solution. We have also reported monolithically fabricated InGaAsP/InP DH lasers (~ = 1.5 ~) in which cavity mirrors have been formed by chemical etching with the 0.3% by volume Br2:CI-I~OH solution (32).…”