No abstract

It is shown that strained isoelectronically doped buffer layers grown on GaAs and InP wafers allow one to reduce the dislocation density drastically by a factor greater than 20. Correspondingly, the photoluminescence efficiency of near-band-edge emission is enhanced by about the same factor. By deep level transient spectroscopy measurements practically no deep levels can be detected in contrast to uncoated wafers. Applied to device fabrication a great improvement is found in comparison to conventionally fabricated optoelectronic and electronic devices.

No abstract

Use of ultrasound for metal cluster engineering in ion implanted silicon oxide Appl. Phys. Lett. 90, 013118 (2007); 10.1063/1.2430055 Effect of aging on wettability of silicon surfaces modified by Ar implantation J. Appl. Phys. 92, 5872 (2002); 10.1063/1.1516866 Effect of antimony ion implantation on Alsilicon Schottky diode characteristics

No abstract