High quality epitaxial GaAs and InP wafers by isoelectronic doping

Abstract

It is shown that strained isoelectronically doped buffer layers grown on GaAs and InP wafers allow one to reduce the dislocation density drastically by a factor greater than 20. Correspondingly, the photoluminescence efficiency of near-band-edge emission is enhanced by about the same factor. By deep level transient spectroscopy measurements practically no deep levels can be detected in contrast to uncoated wafers. Applied to device fabrication a great improvement is found in comparison to conventionally fabricated optoelectronic and electronic devices.

Polarized Raman backscattering selection rules for (hhl)-oriented diamond- and zincblende-type crystals

“…[1][2][3] The fascinating properties and useful advantages of high-index semiconductor fabrication, as well as heteroepitaxial growth atop high-index substrates, have seen growth directions as high as [119] utilized. [2][3][4] This is largely due to the surface step structures exhibited by highindex crystal planes, which play an important role in the vapor-solid reaction processes and surface reconstruction. Certain surface reconstructions have been shown to affect the important mechanisms of epitaxial deposition 5 as well as the final bulk properties.…”

“…3 Studies of (hhl) crystal growths misoriented between (001) and (110) planes (see Fig. 1(a) to clearly visualize such an orientation) have resulted in dramatic changes to dopant incorporation, 4 while also offering altered piezoelectric properties. 6 In particular, for polar systems, high-index (11 l) faces for l > 3 have been shown to have a significantly reduced polarity; these kinds of surfaces are sometimes termed "semipolar."…”

Characterization of MBE Grown GaAs With Isoelectronic Doping of Indium or Antimony

“…[t] on LEC material and also the work of Bhattacharya et al [10] on MBE material. In this latter case we are in agreement that for In contents of up to one atomic percent the deep trap concentrations decrease.…”

“…For LEC grown GaAs Solov'eva et al [8] and Ryotova et al [9] have shown that the incorporation of small amounts of In or Sb reduces deep level concentrations. Beneking et al [10] have shown that the incorporation of small amounts of In or As will improve the electrical and optical properties of GaAs or InP respectively. MBE grown GaAs has also been shown to be improved by the addition of small amounts of one atomic percent or less of In [11,12].…”

Influence of In on the surface morphology of HVPE grown GaN

“…Especially the use of In and InAs for GaAs and InP is well known for improving the crystalline quality of the layer [1]. Ideally, the isoelectronic doping improves the morphology and does not get incorporated into the crystal lattice, i.e.…”