High efficient 850 nm and 1,310 nm multiple quantum well SiGe/Si heterojunction phototransistors with 1.25 plus GHz bandwidth (850 nm)

Pei, Zingway; Liang, Chao‐Chiun; Lai, Li-Shyue; Tseng, Y.T.; Hsu, Yu-Min; Chen, P.S.; Lu, Su-Tsai; Liu, C.M.; Tsai, M. J.; Liu, C.W.

doi:10.1109/iedm.2002.1175837

Cited by 7 publications

(12 citation statements)

References 2 publications

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“…Especially the Si/Si 1−x Ge x /Si quantum wells can be used to realize various novel electronic devices such as high-speed heterojunction bipolar transistors, high-speed field effect transistors, modulation doped field effect transistors, resonant tunneling diodes, [14][15][16][17][18][19][20][21][22][23][24][25][26] etc. The said structure is also very useful to realize various high performance optoelectronic devices such as light emitting diodes (LEDs) [27], MOS LEDs [28], p-i-n photodetectors [29], phototransistors [30,31], etc. The bandgap of Si at room temperature (T = 300 K) is E g(Si) = 1.12 eV.…”

Section: Introductionmentioning

confidence: 99%

Self-consistent solution of Schrödinger–Poisson equations in a reverse biased nano-scale $$p$$ p - $$n$$ n junction based on $$\hbox {Si/Si}_{0.4}\hbox {Ge}_{0.6}/\hbox {Si}$$ Si/Si 0.4 Ge 0.6 / Si quantum well

Acharyya¹,

Chatterjee²,

Das³

et al. 2014

J Comput Electron

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In this paper, the quantum mechanical behavior of a reverse biased nano-scale p-n junction based on Si/Si 0.4 Ge 0.6 /Si quantum well has been studied by obtaining the self-consistent solution of coupled Schrödinger and Poisson equations. The carrier confinement within the said quantum well structure has been investigated by analyzing the special variations of electron and hole densities throughout the device structure obtained from the self-consistent solution of coupled Schrödinger and Poisson equations for different widths of the quantum well. The tunnel current across the junction has also been calculated for the heterostructure for different applied reverse bias voltages. Results show that, due to the greater depth of the quantum well in conduction band as compared to that in valance band of Si/Si 0.4 Ge 0.6 /Si heterostructure, the quantum confinement effect is more pronounced for electrons in conduction band as compared to that for holes in valance band. Finally the current-voltage characteristics of the heterostructure under consideration have been investigated for different widths of the quantum well. It is observed that the modulation of tunnel current may be achieved by varying the width of the quantum well. The present study is the groundwork for investigating the optoelectronic properties of nano-scale photodetectors based on Si/Si 1−x Ge x /Si material system capable of detecting longer wavelengths around 1.30 and 1.55 μm.

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Section: Introductionmentioning

confidence: 99%

Self-consistent solution of Schrödinger–Poisson equations in a reverse biased nano-scale $$p$$ p - $$n$$ n junction based on $$\hbox {Si/Si}_{0.4}\hbox {Ge}_{0.6}/\hbox {Si}$$ Si/Si 0.4 Ge 0.6 / Si quantum well

Acharyya¹,

Chatterjee²,

Das³

et al. 2014

J Comput Electron

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“…However, the III-V-based PDs [1]- [3] are hard to integrate on Si and increase the cost of the hybrid circuits. In order to overcome the drawback of the weak photoabsorption process in Si material and the problems in system integration of III-V-based PDs, the Si-SiGe HPT with 850-nm absorption has been demonstrated [4], [5]. However, to integrate this phototransistor into the Si-based receiver circuit for optical communication, not only is the compatible process a prerequisite [4], [5], but also the device model is required for the circuit design.…”

Section: Introductionmentioning

confidence: 99%

“…In order to overcome the drawback of the weak photoabsorption process in Si material and the problems in system integration of III-V-based PDs, the Si-SiGe HPT with 850-nm absorption has been demonstrated [4], [5]. However, to integrate this phototransistor into the Si-based receiver circuit for optical communication, not only is the compatible process a prerequisite [4], [5], but also the device model is required for the circuit design. A Gummel-Pool model has been used for HPTs [6], [7] with inherited disadvantages such as the lack of impact ionization model, the uncertainty in the quasi-saturation region, and the inaccuracy of the cutoff frequency.…”

Section: Introductionmentioning

confidence: 99%

MEXTRAM Modeling of Si–SiGe HPTs

Yuan

Shi

Pei

et al. 2004

IEEE Trans. Electron Devices

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The integration of the photodetector is essential for optical communication chips. The heterojunction phototransistor (HPT) is integrable with the SiGe HBT process and can be modeled by a modified MEXTRAM model for the circuit simulation. The impact ionization to obtain an extra gain for the optoelectronic conversion and the "early voltage reduction" under constant illumination are well modeled in a modified model. The base recombination current (current) and the substrate contact to enhance the HPT speed are incorporated in ac model. It shows a good agreement between measurement and simulation.

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“…By doing this, we effectively increase the length of the detection region and further increase the responsivity of the detectors for small devices. Note that using a SiGe/Si MQW structure with higher Ge compositions in SiGe, inserted between the Collector and Base in the HPT, extends the detection to 1.3µm [18] and increases the absorption through the higher Ge percentage and a more confined lateral waveguide. However, construction of a MQW structure is not compatible with standard CMOS processing and may not be a practical means of integrating detectors with commercial CMOS circuits.…”

Section: A Integrated Photodetectorsmentioning

confidence: 98%

“…Additionally, SiGe's narrower bandgap offers higher absorption coefficients than silicon at 850nm and longer wavelengths. A 1.5GHz SiGe phototransistor with 1.3A/W responsivity at 850nm has been reported [18]. However, the processing required to produce this multiple quantum well device is not compatible with a CMOS process to construct the necessary circuits.…”

Section: A Integrated Photodetectorsmentioning

confidence: 99%

Merging traditional VLSI with photonics

Apsel

Pappu

Yin

Proceedings of the Lightwave Technologies in Instrumentation and Measurement Conference, 2004.

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This tutorial paper looks at the possibilities for integrated photonic VLSI systems. It examines the need for "disruptive" technologies to solve the very problems that feature size scaling has introduced in traditional VLSI electronics and the potential for photonics and hybridized systems to solve these problems. It also considers the various challenges involved in constructing a photonic VLSI system as well as the potential pitfalls and disadvantages of this approach. The paper concludes with a discussion of these challenges and benefits by showing steps toward realizing such a system and how addressing problems in computer architecture with an innovative photonics approach can lead to benefits in system wide performance not previously seen with existing approaches.

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High efficient 850 nm and 1,310 nm multiple quantum well SiGe/Si heterojunction phototransistors with 1.25 plus GHz bandwidth (850 nm)

Cited by 7 publications

References 2 publications

Self-consistent solution of Schrödinger–Poisson equations in a reverse biased nano-scale $$p$$ p - $$n$$ n junction based on $$\hbox {Si/Si}_{0.4}\hbox {Ge}_{0.6}/\hbox {Si}$$ Si/Si 0.4 Ge 0.6 / Si quantum well

Self-consistent solution of Schrödinger–Poisson equations in a reverse biased nano-scale $$p$$ p - $$n$$ n junction based on $$\hbox {Si/Si}_{0.4}\hbox {Ge}_{0.6}/\hbox {Si}$$ Si/Si 0.4 Ge 0.6 / Si quantum well

MEXTRAM Modeling of Si–SiGe HPTs

Merging traditional VLSI with photonics

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