1998
DOI: 10.1016/s0254-0584(98)00055-8
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High-energy co-implantation of Ti and O ions into sapphire

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Cited by 10 publications
(4 citation statements)
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“…During the last decade, several research groups have used ion implantation to synthesize both metallic and semiconductor nanocrystals. In this way, discrete single-element nanoparticles of Cu [17,18], Ag [19][20][21], Au [22][23][24], Fe [25], Pt [26], Pb [27], Se [28], Ge [29], and Si [30][31][32][33] have been formed. Compound nanocrystals have also been formed by sequential implantation of the constituent elements -these include InP [34], GaAs [35,36], ZnS [37,38], CdS [38,39], CdSe [39][40][41] and PbS [38], as well as oxides such as VO 2 [42], V 2 O 3 [43], and ZnAl 2 O 4 [44].…”
Section: Relation To Previous Workmentioning
confidence: 99%
See 1 more Smart Citation
“…During the last decade, several research groups have used ion implantation to synthesize both metallic and semiconductor nanocrystals. In this way, discrete single-element nanoparticles of Cu [17,18], Ag [19][20][21], Au [22][23][24], Fe [25], Pt [26], Pb [27], Se [28], Ge [29], and Si [30][31][32][33] have been formed. Compound nanocrystals have also been formed by sequential implantation of the constituent elements -these include InP [34], GaAs [35,36], ZnS [37,38], CdS [38,39], CdSe [39][40][41] and PbS [38], as well as oxides such as VO 2 [42], V 2 O 3 [43], and ZnAl 2 O 4 [44].…”
Section: Relation To Previous Workmentioning
confidence: 99%
“…13 Cross-sectional and high-magnification TEM micrographs showing the evolution of the precipitates during implantation at room temperature. An SiO 2 specimen was first implanted with 1×10 17 ions/cm 2 of Zn at 320 keV (top). Randomly oriented spherical colloids of metallic Zn occur throughout the implanted region.…”
Section: Hollow Nanocrystalsmentioning
confidence: 99%
“…Also, both the concentration of the implanted ions and their distribution as a function of depth can be controlled. Some authors have suggested that Cu nanoparticles can be formed directly during the ion implantation process, with no subsequent annealing required [7][8][9]. However, in our experiments no spontaneous nucleation occurs because we keep the beam current intensity <100 nA/cm 2 during the Cu + implantation in order to reduce the heating of the samples, and therefore subsequent thermal treatments are carried out to induce the formation of the Cu nanoclusters [10].…”
Section: Introductionmentioning
confidence: 89%
“…29 In the previous studies, the absorption peak of Cu metal particles in silica glass matrix was reported to be between 550 nm and 600 nm and it was due to the surface plasmon resonance. [30][31][32][33][34][35][36] However, the absorption peaks related to Cu metal particles were observed at 445 nm and 435 nm in the Cu-doped and Cu/Zn-codoped germano-silicate optical glass fibers, respectively. This blue shift of the absorption peak position of the fibers can be attributed to Cu metal particles with smaller size compared to those in the bulk silica glass.…”
Section: Measurementsmentioning
confidence: 99%