Lithography 2010
DOI: 10.5772/8179
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High-energy Electron Beam Lithography for Nanoscale Fabrication

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Cited by 8 publications
(7 citation statements)
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“…This method enables the formation of complex polymer nanostructures of any shape with a minimum line width of 10 nm not only on semiconductor substrates, but also on conductive surfaces such as a Au thin film. A similar sub-20 nm resolution is possibly using state-of-the-art, high-energy e-beam lithography systems with a beam acceleration of 50–100 kV on positive and negative resists [19]. In the single-spot nanolithography, there are no limitations in the use of thin metal films such as Au, Pt, Al, Cu, Ti or Cr.…”
Section: Resultsmentioning
confidence: 99%
“…This method enables the formation of complex polymer nanostructures of any shape with a minimum line width of 10 nm not only on semiconductor substrates, but also on conductive surfaces such as a Au thin film. A similar sub-20 nm resolution is possibly using state-of-the-art, high-energy e-beam lithography systems with a beam acceleration of 50–100 kV on positive and negative resists [19]. In the single-spot nanolithography, there are no limitations in the use of thin metal films such as Au, Pt, Al, Cu, Ti or Cr.…”
Section: Resultsmentioning
confidence: 99%
“…8 Electron beam lithography (EBL) is a flexible manufacturing technology that can be processed without a mask. 9 The atomic force microscope has nanometer resolution, straightforward operation, and a wide processing range. It can be processed in air and liquid environments.…”
Section: Introductionmentioning
confidence: 99%
“…High-energy (EBL) offers a range of advantages over low-energy systems, including proximity effect reduction, vertical resist sidewalls and dimension accuracy over rough surfaces [7,8]. Nanofabrication on insulating substrates using high energy EBL can be challenging due to several key factors.…”
Section: Introductionmentioning
confidence: 99%
“…Nanofabrication on insulating substrates using high energy EBL can be challenging due to several key factors. These include increased electron back scattering; insufficient charge dissipation; large area dose required for exposing conventional high resolution e-beam resists (such as poly(methyl methacrylate) (PMMA) / hydrogen silsesquioxane (HSQ) / ZEP-series) at high EBL acceleration voltages; and inevitably a large beam current in order to pattern with acceptable throughput [7][8][9][10][11][12][13][14][15][16]. Workarounds include depositing an ultra-thin metallic layer either above or below the resist or using a conductive polymer; both methods are used to dissipate the built-up charge during exposure [10,[17][18][19][20].…”
Section: Introductionmentioning
confidence: 99%
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