High energy electron irradiation effects on Ga-doped ZnO thin films for optoelectronic space applications

Serrao, Felcy Jyothi; Sandeep, K.; Bhat, Shreesha; Dharmaprakash, S. M.

doi:10.1007/s00339-018-1652-z

Cited by 10 publications

(2 citation statements)

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“…The measured transmittance of Al-doped ZnO thin films is in good agreement with the findings reported in [16,20]. The obtained transmittance of Ga-doped ZnO thin films is consistent with previously reported findings [18,37]. The transmittance T%(λ) of In-doped ZnO thin films is found to decrease to 70-80%, very close to the values reported by similar previous studies [8,19,38].…”

Section: Uv-vis Spectroscopysupporting

confidence: 92%

“…In principle, we investigate the optical and structural properties of sol-gel dip-synthesized group III (B, Al, Ga, and In)-doped ZnO thin films in this current work. The structural, transport, and optical properties of B-doped ZnO, Al-doped ZnO, Ga-doped ZnO, and In-doped ZnO thin films are found to exhibit different properties than un-doped ZnO thin films [8,[12][13][14][15][16][17][18][19][20]. Deposition of undoped ZnO and group III (B, Al, Ga, and In)-doped ZnO thin films can be achieved by using techniques such chemical vapor deposition [2,21], magnetron sputtering [15,22], pulse laser deposition [23], electrochemical deposition [24], and the sol-gel method [14,25].…”

Section: Introductionmentioning

confidence: 99%

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Structural, Optoelectrical, Linear, and Nonlinear Optical Characterizations of Dip-Synthesized Undoped ZnO and Group III Elements (B, Al, Ga, and In)-Doped ZnO Thin Films

et al. 2020

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Undoped ZnO and group III (B, Al, Ga, and In)-doped ZnO thin films at 3% doping concentration level are dip-coated on glass substrates using a sol-gel technique. The optical properties of the as-prepared thin films are investigated using UV–Vis spectrophotometer measurements. Transmittance of all investigated thin films is found to attain high values of ≥80% in the visible region. We found that the index of refraction of undoped ZnO films exhibits values ranging between 1.6 and 2.2 and approximately match that of bulk ZnO. Furthermore, we measure and interpret nonlinear optical parameters and the electrical and optical conductivities of the investigated thin films to obtain a deeper insight from fundamental and practical points of view. In addition, the structural properties of all studied thin film samples are investigated using the XRD technique. In particular, undoped ZnO thin film is found to exhibit a hexagonal structure. Due to the large difference in size of boron and indium compared with that of zinc, doping ZnO thin films with these two elements is expected to cause a phase transition. However, Al-doped ZnO and Ga-doped ZnO thin films preserve the hexagonal phase. Moreover, as boron and indium are introduced in ZnO thin films, the grain size increases. On the other hand, grain size is found to decrease upon doping ZnO with aluminum and gallium. The drastic enhancement of optical properties of annealed dip-synthesized undoped ZnO thin films upon doping with group III metals paves the way to tune these properties in a skillful manner, in order to be used as key candidate materials in the fabrication of modern optoelectronic devices.

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