2014 20th International Conference on Ion Implantation Technology (IIT) 2014
DOI: 10.1109/iit.2014.6940027
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High energy hydrogen and helium ion implanter

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“…Negative ion beams are valuable for applications where tandem accelerators are used for ion injection [1], such as university research centers in the area of surface analysis using RBS (Rutherford Backscattering Spectrometry) and PIXE (Particle Induced X-Ray Emission) [2] and for high energy, light ion implantation in semiconductor devices [3]. A typical method for negative ion production uses a charge exchange method where positive (1+) ions are incident upon a vacuum region of alkali or other metallic vapour at an energy of a few tens of keV [1], such that a double charge exchange occurs to produce negative (1-) ions.…”
mentioning
confidence: 99%
“…Negative ion beams are valuable for applications where tandem accelerators are used for ion injection [1], such as university research centers in the area of surface analysis using RBS (Rutherford Backscattering Spectrometry) and PIXE (Particle Induced X-Ray Emission) [2] and for high energy, light ion implantation in semiconductor devices [3]. A typical method for negative ion production uses a charge exchange method where positive (1+) ions are incident upon a vacuum region of alkali or other metallic vapour at an energy of a few tens of keV [1], such that a double charge exchange occurs to produce negative (1-) ions.…”
mentioning
confidence: 99%