High energy implantation and annealing of phosphorus in silicon

Skorupa, W.; Wieser, E.; Groetzschel, R.; Posselt, M.; Buecke, H.; Armigliato, A.; Garulli, A.; Beyer, Andreas; Markgraf, W.

doi:10.1016/s0168-583x(87)80068-x

Cited by 22 publications

(3 citation statements)

References 6 publications

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“…As is known, after annealing at a certain temperature for a certain time, the implanted impurities may undergo a large extent of redistribution in the solid, and the normal solidstate diffusion is negligible at this time. This effect has been observed in several substances implanted into silicon, such as boron [1] and phosphorus [2] annealing in silicon. It indicates that this phenomenon results from an abnormal diffusion process, which includes a complex combination of material and dopant parameters, such as defect generation, dopant concentration, enhanced defect diffusion coefficient, migration and lattice rearrangement [3] .…”

Section: Introductionmentioning

confidence: 79%

Effects of high temperature annealing and laser irradiation on activation rate of phosphorus

Han

2020

J. Semicond.

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Thermal annealing and laser irradiation were used to study the activation rate of phosphorus in silicon after ion implantation. The activation rate refers to the ratio of activated impurity number to the total impurity number in the sample. After injecting phosphorus with the dose and energy (energy = 55 keV, dose = 3 × 1015 cm–2), the samples were annealed at different temperatures, and laser irradiation experiments were performed after annealing. The experimental results showed that the activation rate of phosphorus was the highest at 850 °C, and the highest activation rate was 67%. Upon femtosecond laser irradiation samples after thermal annealing, while keeping the crystalline silicon surface without damage, the activation rate was improved. When the energy-flux density of the femtosecond laser was 0.65 kJ/cm2, the activation rate was the highest, increasing from 67% to 74.81%.

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Section: Introductionmentioning

confidence: 79%

Effects of high temperature annealing and laser irradiation on activation rate of phosphorus

Han

2020

J. Semicond.

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“…Moreover, PECVD is one of the main processes used in the nanofabrication of electron devices in order to deposit high quality thin film semiconductors (Jeong et al, 2020). Generally, in nanofabrictation, PECVD of a thin film immediately follows the doping of silicon compound film pre-grown on Si wafer with either Arsenic, phosphorous, or boron via Ion Implantation which aims to tune the conductivity, relative to a particular technology application of the semiconductor industry (Skorupa et al, 1987;Yokota et al, 1994). Consecutively to PECVD process, a lithography process is used to apply a pattern on the thin film semiconductor via a pre-coated photoresist film using either EUV light or electron beam (Desai et al, 2016;Shamma et al, 2016;Van de Kerkhof et al, 2021).…”

Section: Pecvd Deposition Technique Backgroundmentioning

confidence: 99%

Advanced Development of Sustainable PECVD Semitransparent Photovoltaics: A Review

2021

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Energy is the driving force behind the upcoming industrial revolution, characterized by connected devices and objects that will be perpetually supplied with energy. Moreover, the global massive energy consumption increase requires appropriate measures, such as the development of novel and improved renewable energy technologies for connecting remote areas to the grid. Considering the current prominent market share of unsustainable energy generation sources, inexhaustible and clean solar energy resources offer tremendous opportunities that, if optimally exploited, might considerably help to lessen the ever-growing pressure experienced on the grid nowadays. The R&D drive to develop and produce socio-economically viable solar cell technologies is currently realigning itself to manufacture advanced thin films deposition techniques for Photovoltaic solar cells. Typically, the quest for the wide space needed to deploy PV systems has driven scientists to design multifunctional nanostructured materials for semitransparent solar cells (STSCs) technologies that can fit in available household environmental and architectural spaces. Specifically, Plasma Enhanced Chemical Vapor Deposition (PECVD) technique demonstrated the ability to produce highly transparent coatings with the desired charge carrier mobility. The aim of the present article is to review the latest semi-transparent PV technologies that were impactful during the past decade with special emphasis on PECVD-related technologies. We finally draw some key recommendations for further technological improvements and sustainability.

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“…Short-time, high-temperature treatments, such as transient-rapid thermal annealing (T-RTA), are compatible with the requirement of low thermal budget processing [2,3]. Analysis of doping and damage profiles of implanted silicon has been performed using a number of techniques, such as (cross-section) transmission electron microscopy ((X)TEM) [4][5][6][7][8][9], secondary ion mass spectrometry (SIMS) [10][11][12][13], Rutherford backscattering spectrometry (RBS) [14], Secco etching [ 15] C-t measurements [ 16,17] or C-V measurements [16]. Most of these techniques are destructive or require special sample preparation.…”

Section: Introductionmentioning

confidence: 99%

Optimization of ion implantation damage annealing by means of high-resolution X-ray diffraction

et al. 1993

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High-resolution X-ray diffraction (HR-XRD) was investigated as a possible technique for the qualitative analysis of damage annealing of low-dose, high-energy implanted (001) silicon, implanted with dopants smaller than the host atom. The choice of proper Bragg reflection for the rocking-curve measurements is shown to be of crucial importance. The graphic construction of the Ewald sphere is a useful aid for this purpose. As the in-plane lattice constant is confined by the underlying substrate, a change occurs in the perpendicular direction only. Therefore the (026)~ reflection appears to be the most suitable for the detection of changes in lattice constant caused by implantation damage. Qualitative analysis of rocking curves of P-and B-implanted Si samples was compared with electrical measurements and cross-section transmission electron micrographs. It could be established that the minimum implantation doses of P and B at energies ranging from 0.5 to 1.5 MeV, for which HR-XRD is sensitive enough, are about 1.5 x 10 ~4 cm -2 and 5 x 10 ~3 cm -2 respectively. The minimum peak temperature needed for complete damage anneal by transient-rapid thermal annealing was about 1400 K for all doses considered.

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High energy implantation and annealing of phosphorus in silicon

Cited by 22 publications

References 6 publications

Effects of high temperature annealing and laser irradiation on activation rate of phosphorus

Effects of high temperature annealing and laser irradiation on activation rate of phosphorus

Advanced Development of Sustainable PECVD Semitransparent Photovoltaics: A Review

Optimization of ion implantation damage annealing by means of high-resolution X-ray diffraction

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