High-Energy Limit of Massless Dirac Fermions in Multilayer Graphene using Magneto-Optical Transmission Spectroscopy

Plochocka, P.; Faugeras, C.; Орлита, М.; Sadowski, M. L.; Martinez, G.; Potemski, M.; Goerbig, M. O.; Fuchs, Jean-Noël; Berger, Claire; Heer, Walt A. de

doi:10.1103/physrevlett.100.087401

Cited by 130 publications

(162 citation statements)

References 30 publications

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“…This is the reason for the blueshift of the 2D band of folded graphene. By using this model, the sharpness and blueshift of the 2D band of multilayer EG on carbon-terminated SiC can be also easily understood [71], and attributed to the SLG-like linear dispersion of the energy bands of multi layer EG but with a ~10% reduction in Fermi velocity [66,72] relative to that of SLG.…”

Section: Raman Spectroscopy Of Epitaxial Graphenementioning

confidence: 99%

Raman spectroscopy and imaging of graphene

et al. 2008

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Graphene has many unique properties that make it an ideal material for fundamental studies as well as for potential applications. Here we review recent results on the Raman spectroscopy and imaging of graphene. We show that Raman spectroscopy and imaging can be used as a quick and unambiguous method to determine the number of graphene layers. The strong Raman signal of single layer graphene compared to graphite is explained by an interference enhancement model. We have also studied the effect of substrates, the top layer deposition, the annealing process, as well as folding (stacking order) on the physical and electronic properties of graphene. Finally, Raman spectroscopy of epitaxial graphene grown on a SiC substrate is presented and strong compressive strain on epitaxial graphene is observed. The results presented here are highly relevant to the application of graphene in nano-electronic devices and help in developing a better understanding of the physical and electronic properties of graphene.

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Section: Raman Spectroscopy Of Epitaxial Graphenementioning

confidence: 99%

Raman spectroscopy and imaging of graphene

et al. 2008

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“…The individual layers of MEG are electronically decoupled due to an unusual rotational order 2 and consequently the layers exhibit graphene properties rather than graphitic properties as might be expected [3][4][5][6][7][8][9][10] . Specifically, the interface layer, which carries most of the current, shows the non-trivial Berry's phase and has a high mobility (>30,000 cm 2 /V·s) while the other, undoped layers have even much higher mobilities (>250,000 cm 2 /V·s).…”

mentioning

confidence: 99%

Half integer quantum Hall effect in high mobility single layer epitaxial graphene

Ruan

et al. 2009

Applied Physics Letters

154

139

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The quantum Hall effect, with a Berry's phase of π is demonstrated here on a single graphene layer grown on the C-face of 4H silicon carbide. The mobility is ∼ 20,000 cm 2 /V·s at 4 K and 15,000 cm 2 /V·s at 300 K despite contamination and substrate steps. This is comparable to the best exfoliated graphene flakes on SiO 2 and an order of magnitude larger than Si-face epitaxial graphene monolayers. These and other properties indicate that C-face epitaxial graphene is a viable platform for graphenebased electronics.

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“…40,41 In Bernalrhombohedral mixed graphene multilayer, there are several frequently appearing values of velocity and mass, each of which is associated with a single incomplete graphite section or particular combinations of them.…”

Section: A Linear Band Velocity and Quadratic Band Massmentioning

confidence: 99%

Multilayer graphenes with mixed stacking structure: Interplay of Bernal and rhombohedral stacking

Koshino

McCann

2013

Phys. Rev. B

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We study the electronic structure of multilayer graphenes with a mixture of Bernal and rhombohedral stacking and propose a general scheme to understand the electronic band structure of an arbitrary configuration. The system can be viewed as a series of finite Bernal graphite sections connected by stacking faults. We find that the low-energy eigenstates are mostly localized in each Bernal section, and, thus, the whole spectrum is well approximated by a collection of the spectra of independent sections. The energy spectrum is categorized into linear, quadratic, and cubic bands corresponding to specific eigenstates of Bernal sections. The ensemble-averaged spectrum exhibits a number of characteristic discrete structures originating from finite Bernal sections or their combinations likely to appear in a random configuration. In the low-energy region, in particular, the spectrum is dominated by frequently appearing linear bands and quadratic bands with special band velocities or curvatures. In the higher-energy region, band edges frequently appear at some particular energies, giving optical absorption edges at the corresponding characteristic photon frequencies.

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High-Energy Limit of Massless Dirac Fermions in Multilayer Graphene using Magneto-Optical Transmission Spectroscopy

Cited by 130 publications

References 30 publications

Raman spectroscopy and imaging of graphene

Raman spectroscopy and imaging of graphene

Half integer quantum Hall effect in high mobility single layer epitaxial graphene

Multilayer graphenes with mixed stacking structure: Interplay of Bernal and rhombohedral stacking

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