High-energy proton irradiation effects on GaN hybrid-drain-embedded gate injection transistors

Floriduz, Alessandro; Devine, James D.

doi:10.1016/j.microrel.2020.113656

Cited by 8 publications

(4 citation statements)

References 47 publications

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“…These results are attributed to creation of defects in the p-GaN gate. Interestingly, irradiation of HD-GITs with high energy protons up to a fluence of 6×10 14 cm -2 in [271] demonstrate a small positive V TH shift. More work is needed to understand the susceptibility mechanisms between the SP-HEMT and HD-GIT designs to radiation displacement damage effects.…”

Section: B Displacement Damagementioning

confidence: 98%

Stability, Reliability, and Robustness of GaN Power Devices: A Review

Kozak

Zhang

Porter

et al. 2023

IEEE Trans. Power Electron.

109

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Gallium nitride (GaN) devices are revolutionarily advancing the efficiency, frequency, and form factor of power electronics. However, the material composition, architecture and physics of many GaN devices are significantly different from silicon and silicon carbide devices. These distinctions result in many unique stability, reliability and robustness issues facing GaN power devices. This paper reviews the current understanding of these issues, particularly those related to dynamic switching, and their impacts on system performance. Instead of delving into reliability physics, this paper intends to provide power electronics engineers the necessary information for deploying GaN devices in existing and emerging applications, as well as provide references for the qualification evaluations of GaN power devices. The issues covered in this paper include the dynamic instability of device parameters (e.g., on-resistance, threshold voltage, output capacitance), the device robustness in avalanche, overvoltage and short-circuit conditions, the device's switching reliability and lifetime, as well as the device's ruggedness under radiation and extreme (cryogenic and elevated) temperatures. Knowledge gaps and immediate research opportunities in the relevant fields are also discussed. 1

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Section: B Displacement Damagementioning

confidence: 98%

Stability, Reliability, and Robustness of GaN Power Devices: A Review

Kozak

Zhang

Porter

et al. 2023

IEEE Trans. Power Electron.

109

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show abstract

“…By adding additional p-GaN to the gate and drain regions, holes can be injected to increase the threshold voltage and suppress current collapse at drain voltages of up to 800 V with high reliability [20]. In addition, the substrate of the device is in conductive contact with the back metal, and it can be grounded together with the source in use [21]. The complete test circuit for this device is provided in Figure 2.…”

Section: Test Device and Circuitmentioning

confidence: 99%

Study of Single Event Burnout Mechanism in GaN Power Devices Using Femtosecond Pulsed Laser

Cui

Shipeng

et al. 2022

Photonics

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Single event burnout (SEB) is a great threat to gallium nitride (GaN) power devices for aerospace applications. This paper is dedicated to the investigation of the SEB mechanism in a GaN power device using a femtosecond pulsed laser. In the test, the SEB of a commercial p-GaN power device was triggered by a focused laser beam with a wavelength of 620 nm, and the irradiation-sensitive area of the devices was identified. We observed that the damage modes were consistent with the results of heavy ion experiments. The vertical breakdown of the drain is proposed as the dominant mechanism of SEB. We also provide a schematic representation of the leakage path formation using the electrical data obtained following laser-induced SEB. This study provides an important reference for consideration of device reliability and application prospects.

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“…The space radiation environment indeed depends on various factors and contains a wide spectrum of particles of varying energies and states of ionization. In outer space, protons are one of the major sources of radiation [35][36][37][38]. Thus, in this study, protons are a center of focus to study the root cause of radiation-induced effects.…”

Section: Victory Tcad Setup For Proton Irradiationmentioning

confidence: 99%

“…The longterm reliability of GaN HEMTs under radiation environments when viewed from space applications has been a topic of intense research for the past few decades [25][26][27][28][29][30][31][32][33][34]. The literature demonstrates a number of works identifying the mechanism and effects of defect formations, scattering, impact ionization, displacement damage, and other cumulative phenomena occurring due to the binary and ternary nitride bonding on irradiation, ranging from low-to high-energy particles [35][36][37][38][39]. However, there is still a gap between the theoretical explanations and experimental validation of the performance of these GaN devices in radiation environments, especially keeping in view the 1.8 MeV energetic proton being the most damaging [26].…”

Section: Introductionmentioning

confidence: 99%

Proton irradiation effects on buffer-free gallium nitride on silicon carbide high electron mobility transistor-based radio frequency power amplifier

Raut¹,

Sehra²,

Mishra³

et al. 2021

Semicond. Sci. Technol.

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In this work, a comprehensive technology computer aided design-based investigation of a buffer-free high electron mobility transistor under proton radiation is presented. With a 37.55% thinner architecture (without thick and highly doped Fe buffer) grown on silicon carbide substrate, this device design improves the two-dimensional electron gas (2DEG) confinement and helps to eliminate the various dispersion effects and buffer leakage. To gain better insight into the buffer-free device architecture, direct current (DC), thermal, and radio frequency (RF) studies are carried out. To establish the various prospects of this device in high-power and space applications, the performance of the device under 1.8 MeV proton radiation environment is systematically studied. A comparison demonstrates that the buffer-free structure under proton radiation with fluence 1 × 10 14 c m − 2 shows a current I D , M a x degradation of 18.68% compared with 72.7% in the case of conventional architecture. The excellent capability of the buffer-free device to confine 2DEG more precisely even under radiation environments can be concluded from the various DC and RF parameters studied. An extensive study of the effects of proton fluences and biases on the RF power amplifier figures of merit was also conducted by carrying out harmonic balance simulations for different radiation setups, which demonstrates excellent performance of the buffer-free structure.

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High-energy proton irradiation effects on GaN hybrid-drain-embedded gate injection transistors

Cited by 8 publications

References 47 publications

Stability, Reliability, and Robustness of GaN Power Devices: A Review

Stability, Reliability, and Robustness of GaN Power Devices: A Review

Study of Single Event Burnout Mechanism in GaN Power Devices Using Femtosecond Pulsed Laser

Proton irradiation effects on buffer-free gallium nitride on silicon carbide high electron mobility transistor-based radio frequency power amplifier

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