High-energy spectroscopic study of the III-V nitride-based diluted magnetic semiconductor<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mi mathvariant="normal">Ga</mml:mi><mml:mrow><mml:mn>1</mml:mn><mml:mo>−</mml:mo><mml:mi>x</mml:mi></mml:mrow></mml:msub><mml:msub><mml:mi mathvariant="normal">Mn</mml:mi><mml:mi>x</mml:mi></mml:msub><mml:mi mathvariant="normal">N</mml:mi></mml:mrow></mml:math>

Hwang, J. I.; Ishida, Y.; Kobayashi, Masaki; Hirata, Haruyuki; Takubo, Kou; Mizokawa, T.; Fujimori, A.; Okamoto, Jun; Mamiya, K.; Saito, Y.; Muramatsu, Yasuji; Ott, Holger; Tanaka, A.; Kondo, Tsuyoshi; Munekata, H.

doi:10.1103/physrevb.72.085216

Cited by 74 publications

(66 citation statements)

References 27 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…This increase is assumed to be due to the increase in Cr concentration on Ga sites. These observations suggest that annealing at 900°C is suitable for proper activation of Cr in GaN, which is also supported by the observations reported by Hwang et al [65].…”

Section: Agm and Squidsupporting

confidence: 81%

Metal Ions Implantation‐Induced Effects in GaN Thin Films

Husnain¹,

Madhuku²

2017

Ion Implantation - Research and Application

View full text Add to dashboard Cite

show abstract

Section: Agm and Squidsupporting

confidence: 81%

Metal Ions Implantation‐Induced Effects in GaN Thin Films

Husnain¹,

Madhuku²

2017

Ion Implantation - Research and Application

View full text Add to dashboard Cite

show abstract

“…Guided by the growing amount of experimental results, including informative magnetic resonance [59,60] and photoemission [61][62][63] studies, a theoretical model of the hole-controlled ferromagnetism in III-V, II-VI, and group IV semiconductors containing Mn was proposed [64,65]. These materials exhibit characteristics specific to both charge transfer insulators and strongly correlated disordered metals.…”

Section: Spatially Uniform Ferromagnetic Dmsmentioning

confidence: 99%

High Temperature Ferromagnetism and Nano-Scale Phase Separations in Diluted Magnetic Semiconductors and Oxides

Dietl

2007

Acta Phys. Pol. A

View full text Add to dashboard Cite

In this paper the present understanding of the origin of ferromagnetic response that has been detected in a number of diluted magnetic semiconductors and diluted magnetic oxides at room temperature is outlined. It is argued that in these systems, owing to a typically small solubility of magnetic ions, crystallographic or chemical phase separation into regions with a large and a small concentration of magnetic component takes place. The ferromagnetic signatures then come from the regions with a large concentration of magnetic ions, which show non-zero spontaneous magnetization up to the blocking temperature, whose magnitude is proportional to the nanocrystal volume and magnetic anisotropy. Novel methods enabling a control of nano-assembling of magnetic nanocrystals in non-conducting matrices as well as possible functionalities of these spatially modulated magnetic systems are described. We also discuss phase separations into paramagnetic and ferromagnetic regions, which are driven by the Anderson-Mott localization and/or competing ferromagnetic and antiferromagnetic interactions. Finally, the question whether the high temperature ferromagnetism is possible in materials without magnetic ions is addressed.

show abstract

“…10,11 Photoemission spectroscopy, in combination with configuration-interaction ͑CI͒ cluster-model analyses, has been a key experimental tool to study the electronic properties of Mn impurities in diluted magnetic semiconductors. [12][13][14] Here, we present a CI cluster-model analysis of the Mn 2p photoemission line shape from hexagonal MnAs nanoclusters embedded in GaAs, providing insight into the effect of nanoscaling and internal strain on the electronic and magnetic properties of MnAs. We investigate to what extent electron transfer occurs from manganese to arsenic atoms, and the strength of d-d electron correlations.…”

Section: Introductionmentioning

confidence: 99%

Enhanced electron correlations, local moments, and Curie temperature in strained MnAs nanocrystals embedded in GaAs

2010

View full text Add to dashboard Cite

We have studied the electronic structure of hexagonal MnAs, as epitaxial continuous film on GaAs͑001͒ and as nanocrystals embedded in GaAs, by Mn 2p core-level photoemission spectroscopy. Configurationinteraction analyses based on a cluster model show that the ground state of the embedded MnAs nanocrystals is dominated by a d 5 configuration that maximizes the local Mn moment. Nanoscaling and strain significantly alter the properties of MnAs. Internal strain in the nanocrystals results in reduced p-d hybridization and enhanced ionic character of the Mn-As bonding interactions. The spatial confinement and reduced p-d hybridization in the nanocrystals lead to enhanced d-electron localization, triggering d-d electron correlations, and enhancing local Mn moments. These changes in the electronic structure of MnAs have an advantageous effect on the Curie temperature of the nanocrystals, which is measured to be remarkably higher than that of bulk MnAs.

show abstract

High-energy spectroscopic study of the III-V nitride-based diluted magnetic semiconductorGa1−xMnxN

Cited by 74 publications

References 27 publications

Metal Ions Implantation‐Induced Effects in GaN Thin Films

Metal Ions Implantation‐Induced Effects in GaN Thin Films

High Temperature Ferromagnetism and Nano-Scale Phase Separations in Diluted Magnetic Semiconductors and Oxides

Enhanced electron correlations, local moments, and Curie temperature in strained MnAs nanocrystals embedded in GaAs

Contact Info

Product

Resources

About