2013
DOI: 10.1039/c2tc00393g
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High-field chemistry of organometallic precursors for direct-write of germanium and silicon nanostructures

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Cited by 4 publications
(4 citation statements)
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“…In the case of an air gap, the air molecules are rarefied underneath the probe tip, which resembles a vacuum barrier for electron tunneling. However, in the presence of precursor fluid the overall current is enhanced due to factors, such as the existence of generated charge carriers and the empty molecular orbitals of the precursors . Further away from the probe tip, drift and scattering of charge carriers are the main transport modes that manifest themselves as electrical resistivity.…”
Section: Resultsmentioning
confidence: 99%
See 1 more Smart Citation
“…In the case of an air gap, the air molecules are rarefied underneath the probe tip, which resembles a vacuum barrier for electron tunneling. However, in the presence of precursor fluid the overall current is enhanced due to factors, such as the existence of generated charge carriers and the empty molecular orbitals of the precursors . Further away from the probe tip, drift and scattering of charge carriers are the main transport modes that manifest themselves as electrical resistivity.…”
Section: Resultsmentioning
confidence: 99%
“…However, in the presence of precursor fluid the overall current is enhanced due to factors, such as the existence of generated charge carriers and the empty molecular orbitals of the precursors. 37 Further away from the probe tip, drift and scattering of charge carriers are the main transport modes that manifest themselves as electrical resistivity. The measured I−V responses of a probe tip can be treated as an equivalent circuit consisting of a diode and a resistor as shown in Figure 3c.…”
Section: ■ Results and Discussionmentioning
confidence: 99%
“…A high‐resolution method related to FEBID is the decomposition of the precursor molecules by the tunneling current of a scanning tunneling microscope (STM). This approach enables fabrication of features smaller than 10 nm even on bulky substrates . However, we found only one report of a high‐aspect‐ratio metal structure fabricated in an STM, a 9 nm wide and 880 nm high fiber made of crystalline bcc iron …”
Section: Discussionmentioning
confidence: 99%
“…Direct scanning probe writing by high field discharge technique [75,76] was used to write down local oxidized patterns at nanometric scale. During the writing processes, performed in contact mode at a defined set-point force below 10 nN, the tip scans the surface at constant speed (1 4 m/s) according to a pre-designed pattern.…”
Section: Hot Electrons Imagingmentioning
confidence: 99%