High field-effect performance and intrinsic scattering in the two-dimensional MoS2 semiconductors

Improving electron mobility in MoS2 field-effect transistors by optimizing the interface contact and enhancing the channel conductance through local structural phase transition

“…5(g) compares the mobility of our device with n-type MoS 2 FETs reported previously. 28,33–56 It is worth noting that the local 1T structural phase transition is an effective approach for coordinately improving both the intrinsic transport and contact properties to achieve high-speed and low-power MoS 2 FETs.…”

Advancing Nanoelectronics Applications: Progress in Non-van der Waals 2D Materials

“…It has been widely reported that vdW 2D materials often undergo significant property changes compared to their bulk counterparts due to the quantum confinement effect, disrupted structural symmetry, and increased specific surface area (SSA). ,,,− For example, the optical bandgap energy of MoS 2 increases from 1.2 eV (bulk) to 1.8 eV (monolayer) and transit from an indirect to a direct bandgap. , The dimension-controlled properties are also expected in non-vdW materials. However, due to the lack of available samples, only a handful of studies have reported this phenomenon.…”

Design of two-dimensional materials-based heterostructures and preparation methods

“…TMDCs-based heterostructure has a unique characteristic, of which their band gap is related to the number of layers. For example, the bulk molybdenum disulfide has a band gap of 1.2 eV compared with their monolayers of 1.8~1.9 eV [12]. Most TMDC materials have three phase characteristics: triangular (1T), also known as the metallic phase, hexagonal (2H), and 3R.…”