High field electron and hole transport in wurtzite InN

Abstract

A Monte Carlo technique has been used to investigate the steady‐state, transient, and small‐signal transport of electrons and holes in InN in high electric fields. The drift velocities and diffusion coefficients of electrons and holes are calculated using single‐particle Monte Carlo method. The transient drift velocities of electrons and holes are evaluated from ensemble Monte Carlo simulations. The electron small‐signal mobility is estimated. The threshold frequency of 550 GHz for the negative differential mobility (NDM) in InN is obtained.

Nonequilibrium optical phonon effect on high-field electron transport in InN

“…11 To investigate the effect of nonequilibrium phonons on the small-signal differential mobility, we performed the analogous calculations taking into account the nonequilibrium LO phonons. The effect of nonequilibrium phonons on the small-signal electron mobility is seen in Fig.…”

Using ensemble Monte Carlo methods to evaluate non-equilibrium Green’s functions, II. Polar-optical phonons

“…This leads to a slight ellipticity in the constant energy surface and a difference in the values for electron effective mass in the basal plane and normal to this plane. Values used here are 0.055m 0 in the basal plane and 0.045m 0 normal to this plane [39,40]. Non-parabolicity of this conduction band has been taken into account by a normal k • p model [41].…”