High flow rate development: process optimization using megasonic immersion development (MID)

Courboin, Daniel; Choi, Jong Woo; Jung, Sang Hyun; Baek, Seung Hee; Kim, Lee Ju

doi:10.1117/12.569774

Cited by 4 publications

(1 citation statement)

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“…E-beam fogging effects and reactive ion etch (RIE) loading effects are well documented in the industry and many useful strategies have been employed to moderate their impact 1 . In the last few years, critical dimension effects, which can be attributed to the develop process interaction with pattern density, have also been identified and demonstrated to be independent of Ebeam fogging and RIE impacts 2,3,4 .…”

Section: Introductionmentioning

confidence: 95%

Chemical flare long-range proximity effects in photomask manufacturing with chemically amplified resists

et al. 2006

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As critical dimension uniformity requirements tighten for advanced technology nodes, it becomes increasingly important to characterize and correct for systematic sources of critical dimension error in mask manufacturing. A long range proximity effect has been previously reported in the industry to occur in chemically amplified resists that appears to be related to the develop process and we call this phenomenon chemical flare. Several attempts to modulate this effect have been characterized and at least one develop nozzle modification has been found to reduce chemical flare by ~50%. In addition, develop time, develop and rinse processes, and top anti-reflective coatings have been evaluated as methods of minimizing chemical flare effects in e-beam lithography applications. Positive and negative chemically amplified ebeam resists have been evaluated and characterized for this effect.

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