High fmax with High Breakdown Voltage in AlGaN/GaN MIS-HFETs using In-Situ SiN as Gate Insulators

Kuroda, Masayuki; Murata, Takuya; Nakazawa, Shozo; Takizawa, Toshiyuki; Nishijima, Michiharu; Yanagihara, Manabu; Ueda, T.; Tanaka, Tsuyoshi

doi:10.1109/csics.2008.58

Cited by 5 publications

(2 citation statements)

References 4 publications

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“…1) Indeed, this paves the way for the application of GaN-based devices to power amplifiers operating at the millimeter-wave frequency range. 2) The practical use of GaN-based HFETs for power amplifiers in future millimeter-wave communication systems requires high breakdown voltages for high power operation. The three-terminal off-state breakdown voltage is one of the most significant parameters for high power devices because it determines the maximum output power.…”

Section: Introductionmentioning

confidence: 99%

High Off-state Breakdown Voltage 60-nm-Long-Gate AlGaN/GaN Heterostructure Field-Effect Transistors with AlGaN Back-Barrier

Onojima

Hirose

Mimura

et al. 2009

Jpn. J. Appl. Phys.

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We fabricated 60-nm-long-gate AlGaN/GaN heterostructure field-effect transistors (HFETs) with an AlGaN back-barrier structure and investigated the high frequency device characteristics and three-terminal off-state breakdown characteristics as a function of the source-todrain distance. These devices, with source-to-drain distances of 2 to 5 mm, showed very high current-gain cutoff frequencies of more than 118 GHz. The off-state breakdown characteristics were largely dependent on the source-to-drain distance compared to the high frequency device characteristics, and the devices with source-to-drain distances of 4 and 5 mm exhibited very high off-state breakdown voltages of more than 110 V while keeping very high cutoff frequencies. These good breakdown characteristics might be the result of the double-barrier structure (i.e., AlGaN/GaN/AlGaN), which prevents electron spillover to the AlGaN back-barrier at high power conditions.

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Section: Introductionmentioning

confidence: 99%

High Off-state Breakdown Voltage 60-nm-Long-Gate AlGaN/GaN Heterostructure Field-Effect Transistors with AlGaN Back-Barrier

Onojima

Hirose

Mimura

et al. 2009

Jpn. J. Appl. Phys.

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“…The inherent low noise feature is attractive as well [6]. Fig.9 shows the schematic cross section of our state-ofthe art AlGaN/GaN MIS-HFET with short gate length down to 100nm [7]. The in-situ SiN is formed subsequently after the MOCVD in the same reactor without any exposure in the air.…”

Section: Power Switching Gan Transistorsmentioning

confidence: 99%

GaN Transistors for Power Switching and High Frequency Applications

Tsurumi

Uemoto

Sakai

et al. 2008

2008 IEEE Compound Semiconductor Integrated Circuits Symposium

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We review our state-of-the-art GaN-based device technologies for power switching at low frequencies and high frequency operation aiming at future millimeter-wave communication systems. These two applications are emerging in addition to the widely investigated power amplifiers at microwave frequencies for cellular base stations. As for the power switching GaN devices, we present a novel device structure called Gate Injection Transistors (GIT), which enables normally-off operation with high drain current. Here we also present the world highest breakdown voltage of 10400V in AlGaN/GaN HFETs. In the last part of this paper, we present GaN-based MIS-HFETs which exhibits as high f max as 203GHz. The successful integration of lowloss microstrip lines with via-holes onto sapphire enables compact 3-stage K-band amplifier MMIC of which a small-signal gain is as high as 22dB at 26GHz with a 3dB bandwidth of 25-29GHz. The presented devices are promising for the two emerging future applications demonstrating high enough potential of GaN-based transistors.

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Low-Pressure-Chemical-Vapor-Deposition SiNx passivated AlGaN/GaN HEMTs for power amplifier application

Huang

Axelsson

Malmros

et al. 2015

2015 Asia-Pacific Microwave Conference (APMC)

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A Low-Pressure-Chemical-Vapor-Deposition (LPCVD) bilayer SiNx passivation scheme has been investigated and developed, which effectively suppress the current collapse in AlGaN/GaN HEMTs. Low current slump is very helpful for microwave power amplifier application. Compared to in-situ SiNx passivations by metal-organic-chemical-vapor-deposition (MOCVD) and ex-situ SiNx passivations by plasma-enhancedchemical-vapor-deposition (PECVD), the LPCVD SiNx exhibits the quickest recovery time from double-sweep IV curves. From pulsed IV and load-pull measurements, LPCVD SiNx is also confirmed to deliver superior large signal performance. The bilayer LPCVD SiNx passivated device shows negligible current slump (<6%). These characteristics are directly reflected in the large signal operation, where HEMTs with bilayer LPCVD SiNx have highest output power (2.9 W/mm at 3 GHz).

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High fmax with High Breakdown Voltage in AlGaN/GaN MIS-HFETs using In-Situ SiN as Gate Insulators

Cited by 5 publications

References 4 publications

High Off-state Breakdown Voltage 60-nm-Long-Gate AlGaN/GaN Heterostructure Field-Effect Transistors with AlGaN Back-Barrier

High Off-state Breakdown Voltage 60-nm-Long-Gate AlGaN/GaN Heterostructure Field-Effect Transistors with AlGaN Back-Barrier

GaN Transistors for Power Switching and High Frequency Applications

Low-Pressure-Chemical-Vapor-Deposition SiNx passivated AlGaN/GaN HEMTs for power amplifier application

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