2010
DOI: 10.1002/pssa.200982747
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High‐forward‐bias transport mechanism in a‐Si:H/c‐Si heterojunction solar cells

Abstract: In order to elucidate the transport mechanism in a-Si:H/c-Si heterojunction solar cells under high forward bias (U > 0.5 V), we conducted temperature-dependent measurements of current-voltage (I-V) curves in the dark and under illumination. ZnO:Al/(p)a-Si:H/(n)c-Si/(n þ )a-Si:H cells are compared with inversely doped structures and the impact of thin undoped a-Si:H buffer layers on charge carrier transport is explored. The solar cell I-V curves are analyzed employing a generalized twodiode model which allows f… Show more

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Cited by 8 publications
(1 citation statement)
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“…This device had an open-circuit voltage (V oc ) of 750 mV-the highest ever reported for a single-junction crystalline silicon device and 44 mV higher than that of the record 25.0%-efficient UNSW PERL cell [2], [3]-thanks to the displacement of the metal contacts from the wafer surface enabled by amorphous silicon (a-Si:H) passivation [4], [5]. The 83.2% fill factor (FF) of the Panasonic cell was also slightly higher than that of the UNSW PERL cell, easing fears that silicon heterojunction solar cells could not reach high FFs [6]- [9]. However, the short-circuit current density (J sc ) was an enormous 3.2 mA/cm 2 lower than that of the UNSW PERL cell; had the Panasonic device duplicated Z. C. Holman is with Arizona State University, School of Electrical, Computer, and Energy Engineering, Tempe, AZ, USA (e-mail: zachary.…”
Section: Introductionmentioning
confidence: 99%
“…This device had an open-circuit voltage (V oc ) of 750 mV-the highest ever reported for a single-junction crystalline silicon device and 44 mV higher than that of the record 25.0%-efficient UNSW PERL cell [2], [3]-thanks to the displacement of the metal contacts from the wafer surface enabled by amorphous silicon (a-Si:H) passivation [4], [5]. The 83.2% fill factor (FF) of the Panasonic cell was also slightly higher than that of the UNSW PERL cell, easing fears that silicon heterojunction solar cells could not reach high FFs [6]- [9]. However, the short-circuit current density (J sc ) was an enormous 3.2 mA/cm 2 lower than that of the UNSW PERL cell; had the Panasonic device duplicated Z. C. Holman is with Arizona State University, School of Electrical, Computer, and Energy Engineering, Tempe, AZ, USA (e-mail: zachary.…”
Section: Introductionmentioning
confidence: 99%