High-Frequency Applications of Resonant-Tunneling Devices

Sollner, T. C. L. G.; Brown, E. R.; Parker, C. D.; Goodhue, W. D.

doi:10.1007/978-1-4684-7412-1_16

Cited by 6 publications

(2 citation statements)

References 29 publications

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“…Purely quantum effects, such as electron tunnelling, were at that time being harnessed in the tunnel diode (Burrus 1961): a development of this device is the resonant tunnel diode, which remains the 'fastest electron device', with a reported (albeit weak) output above 700 GHz (Brown et al . 1991;Sollner et al . 1989).…”

Section: Historical Backgroundmentioning

confidence: 99%

Where optics meets electronics: recent progress in decreasing the terahertz gap

Chamberlain

2003

Philosophical Transactions of the Royal Society of London. Seri

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The terahertz region of the electromagnetic spectrum offers considerable opportunities for exploitation. Recent advances in source and coherent-detection technology have enabled advances to be made in a wide range of applications. This article reviews the historical development of the field, summarizes the current state of system technology and outlines a number of current system applications, including medical imaging. The limitations of present-day technology are discussed and some future possible applications are considered.

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Section: Historical Backgroundmentioning

confidence: 99%

Where optics meets electronics: recent progress in decreasing the terahertz gap

Chamberlain

2003

Philosophical Transactions of the Royal Society of London. Seri

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“…The physical properties of double-barrier resonant tunneling diodes (DBRΤDs) have been extensively studied [1,2] and considered for device applications [3,4]. A DBRTD is formed by a low-gap semiconductor material (e.g.…”

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confidence: 99%

Hydrostatic Pressure Studies of Asymmetric Double-Barrier Resonant Tunneling Diodes

et al. 1993

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Tunneling processes in double-barrier GaAs/AlAs diodes with an incorporated AlGaAs pre-barrier were studied under hydrostatic pressure. The electrical characteristics resulting from a pre-barrier on the side of the emitter can be explained at 1 bar, solely by the Γ-parofile: increasing pressure shows that the pre-barrier does not reduce the Γ-Χ tunneling. A pre-barrier on the collector side leads to charge buildup at the Χ minimum within the AlAs collector barrier.PACS numbers: 72.80. Ey, 73.40.Gk The physical properties of double-barrier resonant tunneling diodes (DBRΤDs) have been extensively studied [1,2] and considered for device applications [3,4]. A DBRTD is formed by a low-gap semiconductor material (e.g. GaAs) between two layers of a higher-gap one (e.g. AlAs). Its Γ conduction-band profile consists of two barriers sandwiching a quantum well whose energy levels manifest themselves as resonance peaks in the current density-voltage J(V) characteristics. However, since AlAs is an indirect gap semiconductor, additional tunneling through the Χ valleys in the barriers can influence the whole transport mechanism [5][6][7][8][9]. This paper presents data on the effect of hydrostatic pressure (p) on a GaAs/AlAs DBRTD with an AlGaAs additional layer. This kind of stucture was reported to improve both peak current and peak to valley ratio (PVR), which are key parameters for device performance [10,11].Sample A consists of a 17 Å/50 Α/17Å AlAs/GaAs/AlAs DBRTD with an Al0.2Ga0.8As pre-barrier layer (see inset in Fig. 1a) [11]. Sample B is a reference without pre-barrier. At p = 1 bar and zero external bias, the Χ and Γ minimà This work was partially supported by CNPq (Brazil), Committee for Scientific Research (Poland) and Verbund Vorhaben III-V Elektronik Mesoskopische Bauelemente (Germany).(625)

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Quantum Confined Systems: Wells, Wires, and Dots

Rößler

1995

NATO ASI Series

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High-Frequency Applications of Resonant-Tunneling Devices

Cited by 6 publications

References 29 publications

Where optics meets electronics: recent progress in decreasing the terahertz gap

Where optics meets electronics: recent progress in decreasing the terahertz gap

Hydrostatic Pressure Studies of Asymmetric Double-Barrier Resonant Tunneling Diodes

Quantum Confined Systems: Wells, Wires, and Dots

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