High-Frequency Bipolar Transistors

Abstract

This book provides a rather comprehensive presentation of the physics and modeling of high-frequency bipolar transistors with particular emphasis given to silicon-based devices. I hope it will be found useful by those who do as well as by those who intend to work in the field, as it compiles and extends material presented in numerous publications in a coherent fashion. I've worked on this project for years and did my best to avoid errors. Despite all efforts it is possible that "something" has been overlooked during copy-editing and proof-reading. If you find a mistake please let me know. Michael ReischKempten, December 2002 complex quantities are underlined: impedances (symbol z, Z), admittances (symbol y, Y) or hybrid parameters (symbol h), for example, are understood as complex quantities without explicit underlining.

Modeling the input non-quasi-static effect in small signal equivalent circuit based on charge partitioning for bipolar transistors and its impact on RF noise modeling

“…Without including the input NQS effect in the equivalent circuit, the extended van Vliet model gives unphysical results, as shown by the dot-dashed curves. S ib is white 2qI b at low frequencies, and becomes negative at higher frequencies due to the negative À2qI c (1 À jkj 2 ) term in S van ib of (22). Consequently, the Cauchy-Schwarz inequality S ib S ic P jS icib à j 2 or jcj 6 1 [24] is violated for frequencies above 30 GHz, as either RðcÞ > 1 or IðcÞ > 1.…”

“…Here the two noise delay times are chosen to reproduce the S ib , S ic and S icib à of the extended van Vliet model shown in (22) up to second order of x. This leads to…”

Impact of Output Non-Quasi-Static Effect on Consistency Between Two Cutoff Frequency Extraction Methods in Bipolar Transistor Simulation

“…The designation "quasi-static" refers to the fact that in this circuit, the transconductance term g m v and v are in phase, meaning collector current responds to the input base emitter voltage instantly without delay. In reality, a finite delay exists [6]. This is also known as output NQS effect and can be modeled by adding a time delay term e − jωτ d to g m , as shown in Fig.…”

A Novel HBT Frequency Doubler Design for Millimeter-Wave Applications

“…The electrical parameters of the nonlinear HBT model are extracted from DC and smallsignal S-parameters measurements using standard methods, e.g. [8]. Alternatively, the electrical parameters can be determined by a few simulations if a large-signal model is already …”