High frequency design and characterization of SU-8 based conductor backed coplanar waveguide transmission lines

Mbairi, F.D.; Hesselbom, Hjalmar

doi:10.1109/isapm.2005.1432083

Cited by 44 publications

(20 citation statements)

References 6 publications

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“…Approaches utilizing SU-8 and polymer films to create microstrip on a thin film [12], CPW on thin film [13], and membrane-supported CPW lines [14], [15] have also been demonstrated. These polymer approaches typically offer simpler fabrication, but for microstrip lines offer high losses.…”

mentioning

confidence: 99%

Micromachined rectangular-coaxial transmission lines

Reid

Marsh

Webster

2006

IEEE Trans. Microwave Theory Techn.

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Public reporting burden for this collection of information is estimated to average 1 hour per response, including the time for reviewing instructions, searching existing data sources, gathering and maintaining the data needed, and completing and reviewing this collection of information. Send comments regarding this burden estimate or any other aspect of this collection of information, including suggestions for reducing this burden to Department of Defense, Washington Headquarters Services, Directorate for Information Operations and Reports (0704-0188), 1215 Jefferson Davis Highway, Suite 1204, Arlington, VA 22202-4302. Respondents should be aware that notwithstanding any other provision of law, no person shall be subject to any penalty for failing to comply with a collection of information if it does not display a currently valid OMB control number. PLEASE DO NOT RETURN YOUR FORM TO THE ABOVE ADDRESS. REPORT DATE (DD-MM-YYYY) SPONSOR/MONITOR'S ACRONYM(S)AFRL-SN-HS SPONSORING / MONITORING AGENCY NAME(S) AND ADDRESS(ES)Electromagnetics Technology Division Sensors Directorate Air Force Research Laboratory 80 Scott Drive Hanscom AFB MA 01731-2909 SPONSOR/MONITOR'S REPORT NUMBER(S) AFRL-SN-HS-JA-2006-0062 DISTRIBUTION / AVAILABILITY STATEMENTDISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited. SUPPLEMENTARY NOTESClearance Number ESC-06-0062 ABSTRACTRectangular-coaxial (recta-coax) transmission lines fabricated through a three-dimensional micromachining process are presented. These lines are shown to have significant advantages over competing integrated transmission lines such as microstrip and coplanar waveguides. Design equations are presented for impedance, loss, and frequency range. The equations are confirmed with simulations and measurements. The quality factor of shorted lambda/4 resonators is measured to be 156 at 60 GHz. This corresponds to a line loss of 0.353 dB/cm. Advantages of these lines for passive millimeter-wave circuits including ease of signal routing, high isolation, and signal crossovers are demonstrated with realized lines and couplers. SUBJECT TERMSCoplanar waveguides, couplers, filters, microstrip, millimeter-wave circuits, resonators

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mentioning

confidence: 99%

Micromachined rectangular-coaxial transmission lines

Reid

Marsh

Webster

2006

IEEE Trans. Microwave Theory Techn.

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“…This oxide layer likely increases the resistance of the interconnection, which is an effect that is more prominent at higher frequencies as the conductor skin depth decreases. Additionally, the electrical properties of SU-8 can vary with differing lithography process parameters [15], [16]. Simulations of the jumper assembly utilized a relative dielectric constant for SU-8 of 4.1.…”

Section: A Passive Jumper Assembly and Measurementmentioning

confidence: 99%

Liquid–Metal Vertical Interconnects for Flip Chip Assembly of GaAs C-Band Power Amplifiers Onto Micro-Rectangular Coaxial Transmission Lines

Ralston

Oliver

Vummidi

et al. 2012

IEEE J. Solid-State Circuits

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Prior work has demonstrated a new process utilizing room-temperature liquid metal, Galinstan, as an interconnect material for flip-chip bonding. This interconnect forms a flexible bond between chips and carriers, and, therefore, a flip-chip assembly using this technology is much less susceptible to thermomechanical stresses. This paper applies this concept to interconnect GaAs MMIC chips to 3-D Polystrata transmission-line structures. Passive assemblies are utilized to model, test, and verify liquid-metal interconnections, giving average losses per liquid-metal transition of about 0.11 dB out to 26.5 GHz, low parasitics per transition, and demonstrated reliability after temperature cycling. A prefabricated GaAs MMIC chip is postprocessed for liquid-metal assembly. Measured results show, over the MMIC's 4.9-8.5-GHz frequency range, the system's overall reduction in gain of the MMIC is 1.4 dB or 0.7 dB per RF transition as compared with direct probing of the MMIC chip.

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“…In addition, SU-8 has good mechanical properties and can be retained as a final component of the finished structure as a dielectric material. SU-8 is reported to have a dielectric constant value of 3.25 and a loss tangent value of 0.035 at 40 GHz [10].…”

Section: Thick Dielectric Depositionmentioning

confidence: 99%

Development of coaxial shield via in silicon carrier for high frequency application

Rao

Khan

et al. 2006

2006 8th Electronics Packaging Technology Conference

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System-in-package (SiP) based on silicon carriers is a fast emerging technology that offers system design flexibility and integration of heterogeneous technologies. One of the key technologies enabler for silicon carrier is through wafer interconnects. The development of SiP will require the devices with different functionality operating at high frequency to be densely packed on the silicon substrate. However, silicon substrate is usually of low resistivity, when a high frequency signal is transmitted vertically through the substrate via, significant signal attenuation can occur that leads to substrate crosstalk and poor RF performance. In this paper, a novel coaxial shielded via in silicon carrier is presented for high frequency applications. Electrical modeling was carried out to obtain the required geometries for optimum performance. The coaxial shield via is able to suppress undesirable substrate crosstalk between vertical interconnects as well as provide excellent RF performance. The detailed fabrication process is also presented. A negative tone SU-8 photoresist is used as the dielectric for the coaxial shield via structure. A test vehicle is fabricated on 8-inch, 10 ·cm resistivity silicon wafer with a target of achieving a transmission coefficient, S 21 of greater than -0.5 dB at 40 GHz. SU-8 dielectric of approximately 112 µm thickness was deposited on the via sidewall of a 300 µm diameter through wafer via holes, and the via-holes filled with copper using bottom up electroplating approach to achieve a radius ratio, n of 4.

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High frequency design and characterization of SU-8 based conductor backed coplanar waveguide transmission lines

Cited by 44 publications

References 6 publications

Micromachined rectangular-coaxial transmission lines

Micromachined rectangular-coaxial transmission lines

Liquid–Metal Vertical Interconnects for Flip Chip Assembly of GaAs C-Band Power Amplifiers Onto Micro-Rectangular Coaxial Transmission Lines

Development of coaxial shield via in silicon carrier for high frequency application

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