High-Frequency Modulation Characteristics of 1.3-&amp;gt;tex&amp;lt;$muhboxm$&amp;gt;/tex&amp;lt;InGaAs Quantum Dot Lasers

Kim, S.M.; Wang, Y.; Keever, M.; Harris, James S.

doi:10.1109/lpt.2003.823088

Cited by 102 publications

(57 citation statements)

References 8 publications

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“…The reduced internal losses of α i = 4.8 cm −1 are another significant improvement attributed to the superior interface and material quality of the In 0.48 Ga 0.52 P layers. The threshold current density of only j th = 87 A/cm −2 at RT is a best value when compared to literature for QD-based devices with InGaP claddings grown by MBE or MOVPE [Yeh02,Kim04,Cha04]. These excellent results were achieved by an improved closer stacking process and high quality In 0.48 Ga 0.52 P cladding growth, enabling for ground state laser emission.…”

Section: Ingap:si/zn Edge-emittersmentioning

confidence: 75%

“…All free Al(Ga)As surfaces of a structure oxidize, preventing further growth on these surfaces and causing enhanced optical losses in laser waveguides. Narrow waveguide lasers with Al(Ga)As claddings are required to include additional sidewall passivation, which is not necessary for InGaP -based devices [Kim04]. Thus aluminum-free structures are advantageous for edge-emitters but are also a prerequisite for optical amplifiers, which include a taper process with a second epitaxial growth process on the etched structure.…”

Section: Aluminum-free Laser Designmentioning

confidence: 99%

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Design and Realization of Novel GaAs Based Laser Concepts

Germann

2012

Springer Theses

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ZusammenfassungHalbleiterlaser stellen die Grundlage für eine zunehmende Vielzahl von Anwendungen dar, die von der Informationsspeicherung und digitalen Kommunikation bis hin zur Materialbearbeitung reichen. Neuartige Konzepte überwinden bisherige Limitierungen und erschließen neue Anwendungsgebiete. Viele dieser Anwendungsgebiete verlangen nach kostengünstigen Bauelementen, die maximale Brillanz und hohe Ausgangsleistungen oder höchste Geschwindigkeiten erreichen.Diese Arbeit stellt dar, wie essentielle Leistungsmerkmale von Halbleiterlasern durch das Design von Nanostrukturen und epitaktischen Wachstumsprozessen maßgeschneidert werden können. Hierbei wird auf alle Schritte der Laserherstellung eingegangen, vom Design über das Wachstum der Nanostrukturen mittels metallorganischer Gasphasenepitaxie (MOVPE), bis hin zur Herstellung und Charakterisierung kompletter Bauelemente. AbstractSemiconductor lasers represent the backbone for an increasing variety of applications ranging from information storage and communication, to material treatment. Novel concepts are pushing the limits and are enabling new application areas. Many of these areas demand low-cost laser devices with high-brilliance and high-power light output or high-speed performance.This thesis demonstrates how key performance characteristics of semiconductor lasers can be tailored using nanostructure design and epitaxial growth. All aspects of laser fabrication are discussed, from design to growth of nanostructures using metal-organic vapor-phase epitaxy (MOVPE), to fabrication and characterization of complete devices. By employing industrial tools, all developed processes are compatible with mass production.Pulsed high power laser operation up to 8 W and a ultra-low lasing threshold of 66 A/cm 2 is achieved with electrically pumped quantum dots (QD)-based edge emitters at 1.25 µm due to an improved understanding of the QD growth process. This novel process enables 1.3 µm edge emitters for telecom applications in the established InGaAs/GaAs system. At the heart of these achievements is the careful investigation and optimization of nearly all layers of the laser device structure. Designs are altered and precisely tuned by employing AlGaAs or InGaP claddings and varied doping schemes in order to develop new waveguides to meet different requirements.High-power vertical external-cavity surface-emitting lasers (VECSELs) promise continuous-wave (CW) lasing with perfect circular beam quality, plus direct access to the cavity. While the concept is ideal for a multitude of applications, conventional quantumwell based systems exhibit problematic temperature sensitivity during operation. Here, for the first time, VECSELs with sub-monolayer structures and QDs as active layers are realized by MOVPE. These optically pumped devices cover a wide spectral range from 950 nm to 1210 nm, and achieve excellent temperature-stable CW lasing due to the use of QDs and CW output powers of up to 1.4 W.In order to overcome the physical limitations of directly modulated vertical-c...

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Section: Ingap:si/zn Edge-emittersmentioning

confidence: 75%

Section: Aluminum-free Laser Designmentioning

confidence: 99%

Design and Realization of Novel GaAs Based Laser Concepts

Germann

2012

Springer Theses

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“…Therefore highly efficient, and inexpensive infrared (IR) sources and detectors are essential to the smart sensor systems. Quantum dots lasers, which have been in development for decades, have several important advantages [1][2][3]: (i) low power consumption due to low threshold current operation, (ii) array operation and integration due to low voltage and low current operation, (iii) large wavelength tuning due to broad gain spectrum, (iv) low cost due to simple growth and fabrication techniques. However, there has been a lack of development of IR quantum dots lasers, mainly due to the limited material systems which can fulfill the condition of operating within IR spectrum.…”

Section: Introductionmentioning

confidence: 99%

Optical Properties of Closely Coupled Dilute Nitride Mid-Infrared InNSb Quantum Dots

Kim

Hatami

Yuen

et al. 2008

2008 8th IEEE Conference on Nanotechnology

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Abstract-We report the growth and characterization of a new dilute nitride, InNSb quantum dots embedded on both InAs and GaAs substrate. Strain induced, self-assembled quantum dots are grown using solid-source molecular beam epitaxy. For improved growth control, we developed a growth technique similar to atomic layer epitaxial methods. Nitrogen incorporation during formation of quantum dots changes surface energy barrier and causes anisotropic distribution of strain energy, results in formation of closely coupled multiple quantum dots in <110> orientation. We obtained mid infrared luminescence around 3.6 µm from InNSb QDs grown on InAs substrate, where it exhibits relatively low efficiencies of nitrogen incorporation compared to the quantum well structure. The band structure calculation confirms band-anticrossing occurs with localized nitrogen energy band, E N = 0.42 eV, and results in energy band gap reduction of 50 meV with adding 1% of nitrogen.

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“…One of the materials of choice is self-organized InAs/GaAs quantum dots. Nearly ideal characteristics, such as ultra-low threshold current density (o100 A/cm 2 ) [1], very large T 0 (upto N) [2,3], large frequency response (f À3dB ¼ 12 GHz) [4], and near-zero chirp and linewidth enhancement factor [5], have been demonstrated in 1.3 mm pseudomorphic InAs quantum dot lasers. To achieve 1.55 mm emission on GaAs, metamorphic quantum dot lasers have to be used, due to the large strain.…”

Section: Introductionmentioning

confidence: 99%