High-Frequency Noise Modeling of InGaP/GaAs HBT With Base-Contact Capacitance and AC Current Crowding Effect

Huang, Shou-chien; Tang, Wen-Bin; Hsin, Yue-Ming

doi:10.1109/led.2009.2031132

Cited by 4 publications

(1 citation statement)

References 10 publications

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“…There are two well-known basic bipolar transistor modelsthe T-equivalent and hybrid-π models are presented in a tutorial manner [1][2][3]. The T-topology of heterojunction bipolar transistors (HBTs) device is directly related to the device physics, allowing the check of the physical relevance of the extracted parameters, and more popular than π-type circuit model [4][5][6][7]. A few papers have been published to deal with small signal HBT devices performance by utilizing the hybrid π-topology [8][9][10].…”

Section: Introductionmentioning

confidence: 99%

Direct parameter extraction method for InP heterojunction bipolar transistors based on the combination ofT- andπ-models up to 110 GHz

Zhang

Gao

Wang

2019

Semicond. Sci. Technol.

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A parameter-extraction approach for determination of the small-signal equivalent circuit model for InP/InGaAs double heterojunction bipolar transistors is presented in this paper. This method combines the advantages of conventional T-and π-type equivalent-circuit topologies. All the equivalent circuit elements are only extracted analytically from S-parameter data without any numerical optimization. The agreements between the measured and the model-calculated data are excellent in the frequency range of 0.1-110 GHz.

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Section: Introductionmentioning

confidence: 99%

Direct parameter extraction method for InP heterojunction bipolar transistors based on the combination ofT- andπ-models up to 110 GHz

Zhang

Gao

Wang

2019

Semicond. Sci. Technol.

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An empirical noise model for III-V compound semiconductor based HBT

Zhang

Gao

Wang

2020

Solid-State Electronics

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A complete small-signal HBT model including AC current crowding effect

Huang¹,

Liu²

2021

J. Semicond.

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An improved small-signal equivalent circuit of HBT concerning the AC current crowding effect is proposed in this paper. AC current crowding effect is modeled as a parallel RC circuit composed of C bi and R bi, with distributed base-collector junction capacitance also taken into account. The intrinsic portion is taken as a whole and extracted directly from the measured S-parameters in the whole frequency range of operation without any special test structures. An HBT device with a 2 × 20 μm2 emitter-area under three different biases were used to demonstrate the extraction and verify the accuracy of the equivalent circuit.

show abstract

High-Frequency Noise Modeling of InGaP/GaAs HBT With Base-Contact Capacitance and AC Current Crowding Effect

Cited by 4 publications

References 10 publications

Direct parameter extraction method for InP heterojunction bipolar transistors based on the combination ofT- andπ-models up to 110 GHz

Direct parameter extraction method for InP heterojunction bipolar transistors based on the combination ofT- andπ-models up to 110 GHz

An empirical noise model for III-V compound semiconductor based HBT

A complete small-signal HBT model including AC current crowding effect

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