1995
DOI: 10.1109/16.370021
|View full text |Cite
|
Sign up to set email alerts
|

High-frequency operation of lateral hot-electron transistors

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1
1
1

Citation Types

0
18
0

Year Published

2003
2003
2024
2024

Publication Types

Select...
6
1
1

Relationship

3
5

Authors

Journals

citations
Cited by 22 publications
(18 citation statements)
references
References 8 publications
0
18
0
Order By: Relevance
“…These quantities depend on 2ᐉ and L. If an external capacitance is shunting the contacts, then c is the sum of this external capacitance and the geometric capacitance. For the strip contacts with the width L significantly exceeding the spacing between them 2ᐉ, one can use the following formula for the form factor: 28,29 g͑x ͒ϭ…”
Section: Calculation Of the Admittancementioning
confidence: 99%
“…These quantities depend on 2ᐉ and L. If an external capacitance is shunting the contacts, then c is the sum of this external capacitance and the geometric capacitance. For the strip contacts with the width L significantly exceeding the spacing between them 2ᐉ, one can use the following formula for the form factor: 28,29 g͑x ͒ϭ…”
Section: Calculation Of the Admittancementioning
confidence: 99%
“…The factor g(x) is associated with different contributions to the induced current of the electrons and holes at different distances from the highly conducting regions. For the bulky conducting regions g(x) ≃ 1/2l, whereas for the bladelike conducting regions [25], g(x) = 1/π √ l 2 − x 2 . For the i-section capacitance one can use the following formula: [26] …”
Section: Fig 1: Schematic View Of a G-tunnett Structure (A) And Its mentioning
confidence: 99%
“…As follows from Eqs. (35) and (36), the ratio of the dc transconductance at V t V th,2 to that at V t V th,1 is equal approximately to the following small value:…”
Section: Analysis Of the Results And Discussionmentioning
confidence: 97%