High-frequency resonant gate driver for GaN HEMTs

IEEE Open J. Ind. Electron. Soc.

et al. 2020

Development of power electronic converters tend to achieve high efficiency and at the same time high power density in many industrial applications. In recent years, with emerging third-generation semiconductor materials i.e. Silicon Carbide (SiC) and Gallium Nitride (GaN), the switching frequency of several MHz has become a widely studied frequency band, therefore traditional technology can no longer meet the demand, and many new challenges appear. This paper presents a comprehensive review of high frequency (HF) converters, the essential challenges are analyzed such as topology selection, soft-switching technologies, resonant gate drivers, magnetic components design and optimization. INDEX TERMS High frequency, converter, soft-switching resonant gate driver, magnetic components.

Section: Gate Drivers For Sic and Ganmentioning

confidence: 99%

A Review of High Frequency Power Converters and Related Technologies

Wang

Lucía

IEEE Open J. Ind. Electron. Soc.

et al. 2020

“…For the conventional gate driver, two gate resistors with different resistance are respectively installed to the gate-on and gateoff path to protect the transistor from over-shoot breakdown, which is especially important for GaN transistor application as the lack of avalanche breakdown and the limited voltage tolerance [16], [48], [49]. The resonant gate driver with controllable slew rate is proposed in [47] for Silicon MOSFET application and further explored in [50] to be applied in GaN transistor application. As shown in Fig.…”

Section: Zero Initial Inductor Current Resonant Gate Drivermentioning

confidence: 99%

A Comparison Review of the Resonant Gate Driver in the Silicon MOSFET and the GaN Transistor Application

Sun

IEEE Trans. on Ind. Applicat.

Andersen

2019

The increasing transistor power loss brought by the high switching frequency places a limit to the future high power density converter design. A review of resonant gate drivers is given in this paper to provide a vision for its future application. Various resonant gate driver topologies from the prior-art research is categorized and thoroughly compared in terms of the implementation frequency and the percentage gate driver loss reduction. Moreover, a case study of two representative resonant gate driver topologies is given. The conventional gate drive and two resonant gate drivers are implemented to driver Silicon MOSFETs and Gallium Nitride (GaN) transistors respectively. The feasibility and effectiveness of implementing resonant gate drivers in wide band-gap semiconductor transistors is discussed according to a detailed comparison of loss decomposition.

“…The resonant gate driver topology with controllable slew rate is proposed in [23] and further explored in [24] to fit for GaN HEMT application, which is shown as Fig. 6.…”

Section: (B)mentioning

confidence: 99%

Review of Resonant Gate Driver in Power Conversion

Sun

2018 International Power Electronics Conference (IPEC-Niigata 2018 -ECCE Asia)

Andersen

2018

Resonant gate driver is a vital trend of research topic along with the development of high electron mobility transistor (HEMT). Compared with conventional gate driver, resonant gate driver achieves much lower power dissipation during switching transient and widely viewed as one essential technique for high frequency power conversion. This paper provides a state-of-art review and thorough comparison of different resonant gate driver topologies. Case study of two representative topologies is carried out. Application of resonant gate driver in Gallium Nitride (GaN) HEMT is discussed.