Review of Resonant Gate Driver in Power Conversion

Sun, Bainan; Zhang, Zhe; Andersen, Michael A. E.

doi:10.23919/ipec.2018.8507536

Cited by 5 publications

(2 citation statements)

References 35 publications

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“…For switching frequency over 100 kHz, it is recommended to use separate turn-on and turn-off paths, Kelvin source connection, ferrite beads, and minimized turn-off resistance and inductance of the driving loop [10]. Various driving circuits for GaN HEMTs were explored in References [9][10][11][12][13][14][15][16][17][18]. Discussion and designs for GaN HEMT driving circuits were provided in References [19][20][21].…”

Section: Gan Hemt Backgroundmentioning

confidence: 99%

Review of GaN HEMT Applications in Power Converters over 500 W

2019

Electronics

104

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Because of the global trends of energy demand increase and decarbonization, developing green energy sources and increasing energy conversion efficiency are recently two of the most urgent topics in energy fields. The requirements for power level and performance of converter systems are continuously growing for the fast development of modern technologies such as the Internet of things (IoT) and Industry 4.0. In this regard, power switching devices based on wide-bandgap (WBG) materials such as silicon carbide (SiC) and gallium nitride (GaN) are fast maturing and expected to greatly benefit power converters with complex switching schemes. In low- and medium-voltage applications, GaN-based high-electron-mobility transistors (HEMTs) are superior to conventional silicon (Si)-based devices in terms of switching frequency, power rating, thermal capability, and efficiency, which are crucial factors to enhance the performance of advanced power converters. Previously published review papers on GaN HEMT technology mainly focused on fabrication, device characteristics, and general applications. To realize the future development trend and potential of applying GaN technology in various converter designs, this paper reviews a total of 162 research papers focusing on GaN HEMT applications in mid- to high-power (over 500 W) converters. Different types of converters including direct current (DC)–DC, alternating current (AC)–DC, and DC–AC conversions with various configurations, switching frequencies, power densities, and system efficiencies are reviewed.

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Section: Gan Hemt Backgroundmentioning

confidence: 99%

Review of GaN HEMT Applications in Power Converters over 500 W

2019

Electronics

104

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“…For the GaN transistor, the slew rate of the drain-source voltage can be as high as 100 V/ns during the switching transient [13]. All these salient features enable the GaN transistor's application in high frequency power conversion [14]- [16]. However, the transistor over-heating and efficiency degradation brought by the increasing power loss during the high frequency switching is still the major concern.…”

Section: Gating Lossmentioning

confidence: 99%

A Comparison Review of the Resonant Gate Driver in the Silicon MOSFET and the GaN Transistor Application

Sun

Zhang

Andersen

2019

IEEE Trans. on Ind. Applicat.

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The increasing transistor power loss brought by the high switching frequency places a limit to the future high power density converter design. A review of resonant gate drivers is given in this paper to provide a vision for its future application. Various resonant gate driver topologies from the prior-art research is categorized and thoroughly compared in terms of the implementation frequency and the percentage gate driver loss reduction. Moreover, a case study of two representative resonant gate driver topologies is given. The conventional gate drive and two resonant gate drivers are implemented to driver Silicon MOSFETs and Gallium Nitride (GaN) transistors respectively. The feasibility and effectiveness of implementing resonant gate drivers in wide band-gap semiconductor transistors is discussed according to a detailed comparison of loss decomposition.

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