High-Frequency Three-Phase Interleaved LLC Resonant Converter With GaN Devices and Integrated Planar Magnetics

Chao, Fei; Gadelrab, Rimon; Li, Qiang; Lee, Fred C.

doi:10.1109/jestpe.2019.2891317

Cited by 130 publications

(33 citation statements)

References 34 publications

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“…r is the resonant angular frequency, and Z r0 = √ L r /(2C r ) is the impedance of the resonant network. From (1) and (2), the trajectory equation is given by (3).…”

Section: Current Oscillation Phenomenamentioning

confidence: 99%

Drain-Source Synchronous Rectifier Oscillation Mitigation in Light-Load Conditions

Chen

Yeh

et al. 2020

IEEE Open J. Power Electron.

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The increasing usage of LLC-type dc-dc converters in utility, automotive, and power distribution applications has led to a push for a further increase in the converter's operating load range and efficiency. The secondary-side rectifier remains one of the lossiest areas in the converter, alluring designers to synchronous rectification (SR). One method is drain-source SR for cyclically adaptive, closed loop SR. However, when utilized, a severe current oscillation can be observed. An increase in SR duty cycle results in an increase in conduction time of the SR channel over the body diode. This issue becomes increasingly prevalent due to the usage of wide band-gap MOSFETs with high reverse drops and low sensed signal strength. This results in a current oscillation effect, leading to inconsistent SR operation, output ripple, and high EMI. In this paper, the issue is root caused analyzed. A method of improving drain-source SR for light-load SR operation is proposed. The method is prototyped on an FPGA to alleviate the issue on a 600-V in /340-V out 2.5-kW LLC-DCX (DC transformer) power converter.

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“…r is the resonant angular frequency, and Z r0 = √ L r /(2C r ) is the impedance of the resonant network. From (1) and (2), the trajectory equation is given by (3).…”

Section: Current Oscillation Phenomenamentioning

confidence: 99%

Drain-Source Synchronous Rectifier Oscillation Mitigation in Light-Load Conditions

Chen

Yeh

et al. 2020

IEEE Open J. Power Electron.

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show abstract

“…Moreover, the commercial availability of switching devices made of Wide Band Gap (WBG) semiconductor materials promises to bring a considerable leap in performance in power converters [21]- [23]. Currently, the most promising technologies are Silicon Carbide (SiC) MOSFETs and Gallium Nitride (GaN) HEMTs.…”

Section: Figurementioning

confidence: 99%

“…For a linear capacitor, the previous expression (20) can be simplified into the well-known condition that the starting voltage should be at least twice of the supply voltage V DC (21)(22)(23).…”

Section: B Single Device At a Higher Voltagementioning

confidence: 99%

Non-Linear Capacitance of Si SJ MOSFETs in Resonant Zero Voltage Switching Applications

et al. 2020

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The parasitic capacitances of modern Si SJ MOSFETs are characterized by their non-linearity. At high voltages the total stored energy E oss (V DC) in the output capacitance C oss (v) differs substantially from the energy in an equivalent linear capacitor C oss(tr) storing the same amount of charge. That difference requires the definition of an additional equivalent linear capacitor C oss(er) storing the same amount of energy at a specific voltage. However, the parasitic capacitances of current SiC and GaN devices have a more linear distribution of charge along the voltage. Moreover, the equivalent C oss(tr) and C oss(er) of SiC and GaN devices are smaller than the ones of a Si device with a similar R ds,on. In this work, the impact of the nonlinear distribution of charge in the performance and the design of resonant ZVS converters is analyzed. A Si SJ device is compared to a SiC device of equivalent C oss(tr) , and to a GaN device of equivalent C oss(er) , in single device topologies and half-bridge based topologies, in full ZVS and in partial or full hard-switching. A prototype of 3300 W resonant LLC DCDC converter, with nominal 400 V input to 52 V output, was designed and built to demonstrate the validity of the analysis.

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“…According to the ceiling of operating frequency f smax , f n is determined by: (20) Therefore, values of L m , L r , C r1 and C r2 could be derived from L n , C n , Q 1max , f n and relevant expressions. Then, it needed to be verified whether L m satisfied condition (19), and measure the gain curve of the reverse mode, which can be adjusted according to the above design rules. It should be pointed out that the adjustment of any parameter will affect the forward and reverse DC gains at the same time, and a better design result can only be obtained by continuous adjustment.…”

Section: Design Proceduresmentioning

confidence: 99%

“…Due to these problems, it is meaningful to study the application of GaN transistors in different BDC topologies that have already been equipped with MOSFETs. In [15][16][17][18][19][20], GaN transistors are applied to the conventional LLC resonant converter. However, it is hard to meet the bidirectional application requirement with the limitation of the LLC topology in the reverse mode.…”

Section: Introductionmentioning

confidence: 99%

Analysis and Design of High-Efficiency Bidirectional GaN-Based CLLC Resonant Converter

Liu

Wang

et al. 2019

Energies

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A bidirectional CLLC resonant converter (CLLC-BRC) based on GaN transistors is analyzed and designed in this paper. Similar resonant topologies are listed and commented on, with the CLLC topology showing competitiveness in bidirectional energy transmission. The analysis of the aforementioned converter has been provided, including the reveal of resonant frequencies of the CLLC topology and an improved zero-voltage switching (ZVS) condition with operation principles of the reverse mode and relevant parasitic parameters taken into account. The design methodology of the aforementioned converter based on pulse frequency modulation (PFM) is further discussed in detail. A prototype with a rated power of 400 W and a maximal operating frequency that is larger than 0.5 MHz was built to verify the proposed design methodology. The highest conversion efficiency of the prototype was 97.02% in the forward mode, and it was 95.96% in the reverse mode.

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High-Frequency Three-Phase Interleaved LLC Resonant Converter With GaN Devices and Integrated Planar Magnetics

Cited by 130 publications

References 34 publications

Drain-Source Synchronous Rectifier Oscillation Mitigation in Light-Load Conditions

Drain-Source Synchronous Rectifier Oscillation Mitigation in Light-Load Conditions

Non-Linear Capacitance of Si SJ MOSFETs in Resonant Zero Voltage Switching Applications

Analysis and Design of High-Efficiency Bidirectional GaN-Based CLLC Resonant Converter

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