1994 IEEE MTT-S International Microwave Symposium Digest (Cat. No.94CH3389-4)
DOI: 10.1109/mwsym.1994.335416
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High-frequency time-domain modeling of GaAs FETs using hydrodynamic model coupled with Maxwell's equations

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Cited by 7 publications
(7 citation statements)
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“…In a medium, the Euler-Maxwell system including natural collision terms is written as the following (nonconservative) form (see [1][2][3][4][5]):…”
Section: Appendix Amentioning
confidence: 99%
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“…In a medium, the Euler-Maxwell system including natural collision terms is written as the following (nonconservative) form (see [1][2][3][4][5]):…”
Section: Appendix Amentioning
confidence: 99%
“…In this regime, a complicated system may asymptotically be replaced by a much simpler hyperbolic or parabolic system, the behavior of the latter is either already well understood or easier to analyze. This work concerns the following scaled non-isentropic Euler-Maxwell equations for semiconductors or plasmas (see Appendix A and [1][2][3][4][5]):…”
Section: Introductionmentioning
confidence: 99%
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“…There have been numerical simulations 3,4 , but the only rigorous study appears to be that made by Chen etc. in Ref.…”
Section: Introductionmentioning
confidence: 99%
“…Recently, a 3D finite-difference time domain model consisting of a solution of Maxwell's equations coupled to the hydrodynamic equations representing active device simulation has been developed [5]. The improved efficiency of numerical schemes and the advent of supercomputers allows steady-state small and large-signal operations of FET microwave devices to be investigated over several tens of picoseconds.…”
Section: Introductionmentioning
confidence: 99%