High gain AlGaAs∕GaAs heterojunction bipolar transistor fabricated on SiGe∕Si substrate

Abstract

Experimental demonstration of pseudomorphic heterojunction bipolar transistors with cutoff frequencies above 600 GHz Appl. Phys. Lett. 86, 152101 (2005); 10.1063/1.1897831Comparison of As-and P-based metamorphic buffers for high performance InP heterojunction bipolar transistor and high electron mobility transistor applications High gain AlGaAs/ GaAs heterojunction bipolar transistors grown on SiGe/ Si substrate have been fabricated. Measured peak dc current gain of ϳ100 is obtained for a device with emitter area of ϳ1.6ϫ 10 3 m 2 , with base concentration of 1 ϫ 10 19 cm −3 . The dominant base current component is discussed and determined. The breakdown characteristic is studied and compared with that of the device grown on GaAs substrate. Our experimental results demonstrate that SiGe/ Si substrate could provide a robust method for monolithic integration of high speed GaAs-based electronic devices with silicon-based circuitry.

Ge virtual substrates for high efficiency III-V solar cells: applications, potential and challenges

“…Conversely, after the growth of the 3JSC structures, with a total thickness of the III-V structure of around 5 µm, new cracks appeared easily when manipulating the samples (for example when dicing them). This could be expected, as the III-V layer thickness grown on Si that produces cracks was estimated to be 3 µm by other authors [25]. In fact, this problem was not observed in the Ge bottom cells grown on the same Ge/Si virtual substrates.…”

Effects of growth parameters on the surface morphology of InAs quantum dots grown on GaAs/Ge/Si1−xGex/Si substrate

“…The comparatively low TDD could potentially lead to a breakthrough in device performance for Si-based QDs. In fact, many III-V devices have been demonstrated on the graded Si 1 À xGe x /Si substrate, such as quantum well lasers, heterojunction bipolar transistors and solar cells [12][13][14]. However, there are very few studies of QDs on the graded Si 1 À x Ge x /Si platform [15,16].…”

A gate-tunable symmetric bipolar junction transistor fabricatedviafemtosecond laser processing

“…8 With the progress of the modern industry and the development of nanotechnology, the applications of nano-dimensional integrated high-performance devices have become the trend of future electronics. As a result, BJTs based on traditional bulk materials, including silicon/silicon-germanium alloys, aluminum gallium arsenide/ gallium arsenide, and indium phosphide/indium gallium arsenide, [9][10][11][12][13] will be not able to meet the demand due to their difficult fabrication procedures and limited performance.…”