High-gain complementary inverter with InGaZnO/pentacene hybrid ambipolar thin film transistors

Abstract

Ambipolar thin film transistors ͑TFTs͒ with InGaZnO/pentacene heterostructure channels are demonstrated for a high-voltage-gain complementary metal oxide semiconductor ͑CMOS͒ inverter. The ambipolar TFT exhibits a electron mobility of 23.8 cm 2 / V s and hole mobility of 0.15 cm 2 / V s for the InGaZnO and pentacene, respectively. The thermal annealing process was also studied to adjust electron concentration reducing operating voltage of the CMOS inverter. The voltage gain achieves as high as 60 obtained in the first and third quadrants of the voltage transfer characteristic. The high performance and simple manufacture of the heterostructure CMOS inverter show promise as critical components in various electrical applications.

Ambipolar Oxide Thin‐Film Transistor

“…Therefore, oxide-based complementary-like inverters have been demonstrated as hybrid circuits combined with p -channel organic TFTs. [5][6][7] Most oxide semiconductors can only tolerate either n -type or p -type doping; i.e., bipolar oxide semiconductors, in which both n -type and p -type carrier doping are possible in the same material, are very limited; to date, only CuInO 2 [ 8 ] , ZnO [ 3 ] , and LaMnPO [ 9 ] are known. Therefore, no oxide TFT has been found to operate in an inversion/ambipolar mode, although there have been various semiconductors demonstrating inversion/ambipolar TFT operation.…”

“…The two SnO TFTs possessed identical channel dimensions and were connected to form a single inverter circuit ( Figure 4 [5][6][7][8][9][10][11][12][13][14][15][16][17][18][19][20]. [25][26][27][28][29] This is caused by the high off current and imbalance of the TFT characteristics originating from the low n -channel mobility in our oxide TFTs.…”

Complementary Integrated Circuits Based on p-Type SnO and n-Type IGZO Thin-Film Transistors

“…To realize complementary inverters, one can either combine an n-type TFT and a p-type TFT or use two ambipolar TFTs. A rail-to-rail output voltage behavior can be easily achieved in the former but hard to achieve in latter case because neither of the two ambipolar TFTs can be fully switched off [8,9,10,11]. The static current will also result in a static power consumption, which may be an issue in the case of large scale integration.…”

High performance of full swing logic inverter using all n-types amorphous ZnSnO and SiZnSnO thin film transistors

“…2,3 In the previous study, conventional and oxide based complementary metal oxide semiconductor (CMOS) inverter composed by p-type and n-type channel materials has been reported. [4][5][6] Among them, for instance, the oxide based CMOS inverter with In 2 O 3 /SnO 2 and hybrid CMOS inverter with ZnO/pentacene are demonstrated. 7,8 However, the results of electrical performance in these reports are deteriorating due to the poor electrical characteristics of p-type TFTs.…”