2023
DOI: 10.1039/d3tc02474a
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High gain complementary inverters based on comparably-sized IGZO and DNTT source-gated transistors

Eva Bestelink,
Pongsakorn Sihapitak,
Ute Zschieschang
et al.

Abstract: We report the first implementation of a complementary circuit using thin-film source-gated transistors (SGTs). The n-channel and p-channel SGTs were fabricated using the inorganic and organic semiconductors amorphous InGaZnO (IGZO)...

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Cited by 8 publications
(2 citation statements)
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“…The remarkable voltage amplification achieved in our study is benchmarked against various semiconductor systems, including pristine semiconducting polymers 16,25,[27][28][29][30][31][32][33][34][35][36][37] (both unipolar and complementary configurations), p-type oxide semiconductors, [38][39][40][41][42] p-type organic semiconductors [43][44][45][46][47][48][49][50][51][52] (such as polymers and carbon nanotubes) and n-type IGZO (complementary). At V DD o 10 V, the voltage gains reported in the literature typically fall below 50 V/V, representing a roughly 4-fold difference compared to our hybrid inverters composed of the polymer monolayer and IGZO.…”
Section: Complementary Logic Invertersmentioning
confidence: 99%
“…The remarkable voltage amplification achieved in our study is benchmarked against various semiconductor systems, including pristine semiconducting polymers 16,25,[27][28][29][30][31][32][33][34][35][36][37] (both unipolar and complementary configurations), p-type oxide semiconductors, [38][39][40][41][42] p-type organic semiconductors [43][44][45][46][47][48][49][50][51][52] (such as polymers and carbon nanotubes) and n-type IGZO (complementary). At V DD o 10 V, the voltage gains reported in the literature typically fall below 50 V/V, representing a roughly 4-fold difference compared to our hybrid inverters composed of the polymer monolayer and IGZO.…”
Section: Complementary Logic Invertersmentioning
confidence: 99%
“…Transconductance stands as an intrinsic trait of a transistor, delineating the intricate relationship between a variation in the drain current and the increase in the applied gate voltage. Within its essence lies a metric encapsulating the ability of a transistor in effecting signal modulation or amplification, profoundly affecting the output current dynamics. Mathematically, transconductance is defined as the ratio of the change in drain current (Δ I d ) to the change in gate voltage (Δ V g ), at fixed other voltage constant. , Transconductance is an evaluation factor in determining the transistor switching or amplifying characteristics, and to be specific, a larger value of transconductance indicates its performance to manipulate their behavior as amplifiers or signal processing components. Thus, devices only considered its amplitude level without placing significant emphasis on its polarity. However, emerging transconductance behavior, that is, negative differential transconductance was proposed. This characteristic exhibits a different behavior from conventional transistors, where the size of the output current decreases as the magnitude of the applied gate voltage increases.…”
Section: Introductionmentioning
confidence: 99%