High-Gain Fully Printed Organic Complementary Circuits on Flexible Plastic Foils

Guérin, Mathieu; Daami, Anis; Jacob, S.; Bergeret, Emmanuel; Bènevent, Evangéline; Pannier, P.; Coppard, R.

doi:10.1109/ted.2011.2162071

Cited by 104 publications

(52 citation statements)

References 22 publications

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“…In industrial processes, screen-printed films usually have a thickness larger than about 0.5 mm. [25,26] Silk screen-printed polymer solar cells have been reported on polyethylene terephthalate (PET) foil by Krebs et al [27] Flexible pentacene transistors, [28] complementary metal oxide semiconductor (CMOS) devices on polyethylene naphthalate (PEN) foil [29] as well as flexible thin film supercapacitors on polyester (PE) foils realized using screen printing have been reported. [30] …”

Section: Introductionmentioning

confidence: 99%

Printable Magnetoelectronics

2013

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A new molecular phase transition material, [PhCH2NH(CH3)2]2C2O4⋅H2C2O4, which undergoes a reversible phase transition at 151.6 K, has been successfully synthesized. Differential scanning calorimetry (DSC), specific heat capacity, and dielectric measurements confirm its reversible phase transition with a large thermal hysteresis of 15.1 K, demonstrating that the phase transition is typical first order. Variable‐temperature single‐crystal X‐ray diffraction analyses reveal that the order–disorder transformations of carboxy oxygen atoms induce the structural phase transition. A slight reorientation of the oxalic acid unit is discovered to accompany the ordering of carboxy oxygen atoms at low temperature. The DSC measurement result of the deuterated analog is different to that of 1, indicating that proton dynamic motions in hydrogen bonds also contribute to the phase transition.

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Section: Introductionmentioning

confidence: 99%

Printable Magnetoelectronics

2013

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“…The channel length was varied from 40 to 200 μ m at a fi xed channel width of 1.5 mm. CMOS devices on PEN foil [ 44 ] have been fabricated by laser ablation of a 30 nm gold source-drain layer and screen printing. The p-and n-type semiconductor, a 800-nm-thick dielectric fl uoropolymer and a gate layer of silver paste were subsequently screen printed, showing a process alignment of ± 25 μ m for all printed materials.…”

Section: Progress Reportmentioning

confidence: 99%

Fabrication of Transistors on Flexible Substrates: from Mass‐Printing to High‐Resolution Alternative Lithography Strategies

2012

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In this report, the development of conventional, mass-printing strategies into high-resolution, alternative patterning techniques is reviewed with the focus on large-area patterning of flexible thin-film transistors (TFTs) for display applications. In the first part, conventional and digital printing techniques are introduced and categorized as far as their development is relevant for this application area. The limitations of conventional printing guides the reader to the second part of the progress report: alternative-lithographic patterning on low-cost flexible foils for the fabrication of flexible TFTs. Soft and nanoimprint lithography-based patterning techniques and their limitations are surveyed with respect to patterning on low-cost flexible foils. These show a shift from fabricating simple microlense structures to more complicated, high-resolution electronic devices. The development of alternative, low-temperature processable materials and the introduction of high-resolution patterning strategies will lead to the low-cost, self-aligned fabrication of flexible displays and solar cells from cheaper but better performing organic materials.

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“…• C [11,12,13,14]. Complementary organic thin-film transistors (OTFTs) are the key asset to develop reliable, low-power, fullyorganic integrated circuits.…”

Section: Introductionmentioning

confidence: 99%