High growth rates and wall decoration of carbon nanotubes grown by plasma-enhanced chemical vapour deposition

Morjan, Raluca Elena; Mal'tsev, V. M.; Nerushev, Oleg; Yao, Yiming; Falk, L.K.L.; Campbell, Eleanor E. B.

doi:10.1016/j.cplett.2003.11.063

Cited by 37 publications

(19 citation statements)

References 24 publications

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“…demonstrated, using PECVD, the growth of CNTs longer than 150 µm [36], a length long enough for the TSV application. The growth method may be adapted to grow CNTs inside deep vias.…”

Section: Resultsmentioning

confidence: 99%

Through silicon vias filled with planarized carbon nanotube bundles

et al. 2009

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The feasibility of using carbon nanotube (CNT) bundles as the fillers of through silicon vias (TSVs) has been demonstrated. CNT bundles are synthesized directly inside TSVs by thermal chemical vapor deposition (TCVD). The growth of CNTs in vias is found to be highly dependent on the geometric dimensions and arrangement patterns of the vias at atmospheric pressure. The CNT-Si structure is planarized by a combined lapping and polishing process to achieve both a high removal rate and a fine surface finish. Electrical tests of the CNT TSVs have been performed and their electrical resistance was found to be in the few hundred ohms range. The reasons for the high electrical resistance have been discussed and possible methods to decrease the electrical resistance have been proposed.

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“…demonstrated, using PECVD, the growth of CNTs longer than 150 µm [36], a length long enough for the TSV application. The growth method may be adapted to grow CNTs inside deep vias.…”

Section: Resultsmentioning

confidence: 99%

Through silicon vias filled with planarized carbon nanotube bundles

et al. 2009

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“…Although the overall view of such vertically aligned CNT arrays appears to show very good alignment, on the individual nanotube scale it can be seen that the alignment is far from perfect. The more dense PECVD structures do, however, typically have better local alignment than the TCVD [17] . The determined porosities for films of vertically aligned MWNT correspond to an individual CNT diameter/spacing ratio of 0.5 and 0.7 for the thermal and plasma CVD arrays, respectively.…”

Section: Alignment Dependence On Pattern Sizementioning

confidence: 98%

Effect of catalyst pattern geometry on the growth of vertically aligned carbon nanotube arrays

Jeong

Olofsson

Falk

et al. 2009

Carbon

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“…Due to this effect, the CNT nucleation slows down and the grown structures can additionally be damaged in the plasma-assisted CNT growth [10,29]. Note also that µm-length CNTs can catalyze some carbon nanostructures, including carbon nanowalls, when the concentration of C radicals exceeds that in the plasma environment [69,70].…”

Section: Cnt Nucleation and Etchingmentioning

confidence: 99%

Nanoscale mechanisms of CNT growth and etching in plasma environment

Khalilov¹,

Bogaerts²,

Hussain³

et al. 2017

J. Phys. D: Appl. Phys.

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Plasma-enhanced chemical deposition (PECVD) of carbon nanotubes has already been shown to allow chirality control to some extent. In PECVD, however, etching may occur simultaneously with the growth, and the occurrence of intermediate processes further significantly complicates the growth process. We here employ a computational approach with experimental support to study the plasmabased formation of Ni nanoclusters, Ni-catalyzed CNT growth and subsequent etching processes, in order to understand the underpinning nanoscale mechanisms. We find that hydrogen is the dominant factor in both the restructuring of a Ni film and the subsequent appearance of Ni nanoclusters, as well as in the CNT nucleation and etching processes. The obtained results are compared with available theoretical and experimental studies and provide a deeper understanding of the occurring nanoscale mechanisms in plasma-assisted CNT nucleation and growth.

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High growth rates and wall decoration of carbon nanotubes grown by plasma-enhanced chemical vapour deposition

Cited by 37 publications

References 24 publications

Through silicon vias filled with planarized carbon nanotube bundles

Through silicon vias filled with planarized carbon nanotube bundles

Effect of catalyst pattern geometry on the growth of vertically aligned carbon nanotube arrays

Nanoscale mechanisms of CNT growth and etching in plasma environment

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