High-<i>k</i>dielectrics for 4H-silicon carbide: present status and future perspectives

Siddiqui, Amna; Khosa, Rabia Yasmin; Usman, Muhammad

doi:10.1039/d0tc05008c

Cited by 31 publications

(11 citation statements)

References 135 publications

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“…[70,72] Therefore, highly improved dielectric properties were achieved using PANI as reinforcement material, increasing the dielectric properties without strong modifications of the electrical conductivity. Hence, the highdielectric properties [73,74] of the printable acrylates reinforced with 3.5 wt% PANI are ideal for the fabrication of sensors and flexible electronic devices.…”

Section: Electrical Propertiesmentioning

confidence: 99%

Photocurable Printed Piezocapacitive Pressure Sensor Based on an Acrylic Resin Modified with Polyaniline and Lignin

Arias-Ferreiro

Ares‐Pernas

Lasagabáster-Latorre

et al. 2022

Adv Materials Technologies

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In this context, dielectric polymeric materials are being investigated due to their scientific and technological interest since they combine dielectric properties with appropriate mechanical flexibility and simple processability. [2,3] Such composite materials show huge opportunities to be integrated in devices such as electronics, [4][5][6] sensors and actuators. [7] Within this context, additive manufacturing emerges as a set of advanced fabrication techniques that enable the production of fully functional electronic devices in one step printing. [1,[8][9][10] However, for photopolymerization-based 3D printing techniques the number of UV curable materials suitable for the fabrication of sensors and actuators is still scarce. [1] Research in this field pursues 3D printing materials with new features but also environmentally more friendly and sustainable, as demanded by today's society. [11][12][13] Techniques as stereolithography (SLA) and digital light processing (DLP) are based on the layer-by-layer solidification of a liquid photosensitive resin via UV-light exposure. [14] This is a tailorable process where multicomponent resins provide the photo-rheological and mechanical properties necessary to ensure a successful print. [15] The design of suitable materials for the manufacture of pressure sensors with high sensitivity and flexibility in wearable electronics is still a challenge. In this study, a flexible and portable pressure sensor is developed based on a photopolymeric formulation of polyaniline (PANI)/Lignin/acrylate. The amount of photoinitiator and the presence of lignin within the filler are investigated to obtain the best printability and capacitive response. Low PANI contents drastically increase the dielectric constant and 4 wt% photoinitiator improves the signal and sensitivity. A sensitivity of 0.012 kPa -1 is achieved in a linear range (0-10 kPa) with only 3.5 wt% PANI. Lignin improves both the dispersion of the filler within the matrix and the printability of the resin, due to lower absorptivity at the UV wavelength of the 3D printer. Thus, the PANI-Lignin filler is selected for the fabrication of a piezocapacitive prototype transducer. The pressure transducer demonstrate its practical application by responding to a human footfall and transmitting its corresponding electrical signal. This study shows the enhanced properties of lignin modified PANI acrylate composites. Based on lignin, an abundant natural waste, a sustainable photocurable cost-effective polymer is proposed for the fabrication of printable, wearable electronics.

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Section: Electrical Propertiesmentioning

confidence: 99%

Photocurable Printed Piezocapacitive Pressure Sensor Based on an Acrylic Resin Modified with Polyaniline and Lignin

Arias-Ferreiro

Ares‐Pernas

Lasagabáster-Latorre

et al. 2022

Adv Materials Technologies

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“…Rare earth cerium oxide (CeO 2 ) is amongst the front runners to replace SiO 2 owing to its high k value (~26) as well as outstanding characteristics, which include large bandgap (~6 eV), high dielectric breakdown electric field (~25 MV/cm), strong chemical and thermal stability, as well as low lattice misfit with respect to Si (0.35%) 17‐21 . Besides, the use of high k CeO 2 would prevent premature breakdown of the devices as a lower electric field is induced on the passivation layer relative to the Si substrate 22 . Another versatility of CeO 2 phase in transforming from oxidizing (Ce 4+ ) to reducing (Ce 3+ ) state has attracted its employment in catalytic applications but this feature was deemed to result in detrimental effect towards the passivating properties of CeO 2 layer 23 caused by the formation of low k SiO 2 interfacial layer, of which its presence would ultimately reduce the overall k value of the device 24 .…”

Section: Introductionmentioning

confidence: 99%

“…[17][18][19][20][21] Besides, the use of high k CeO 2 would prevent premature breakdown of the devices as a lower electric field is induced on the passivation layer relative to the Si substrate. 22 Another versatility of CeO 2 phase in transforming from oxidizing (Ce 4+ ) to reducing (Ce 3+ ) state has attracted its employment in catalytic applications but this feature was deemed to result in detrimental effect towards the passivating properties of CeO 2 layer 23 caused by the formation of low k SiO 2 interfacial layer, of which its presence would ultimately reduce the overall k value of the device. 24 Although eradicating the formation of interfacial layer would be very challenging, previous studies reported about the enhancement in breakdown voltage and leakage current due to the interfacial layer formation coupled with an acceptable interface quality between CeO 2 passivation layer and Si substrate.…”

Section: Introductionmentioning

confidence: 99%

Effects of post‐deposition annealing of cerium oxide passivation layer in nitrogen‐oxygen‐nitrogen ambient

Shekkeer

Cheong

Quah

2022

Intl J of Energy Research

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Summary Effects of post‐deposition annealing temperature (400°C, 600°C, 800°C and 1000°C) onto metal‐organic decomposed cerium oxide (CeO2) precursor spin‐coated on n‐type Si substrate was carried out in nitrogen‐oxygen‐nitrogen ambient. The capability of nitrogen to inhibit further oxidation of the Si surface by attaching to the oxygen vacancies sites was reported. Excessive formation of SiO2 interfacial layer however occurred at 1000°C, surpassing the thickness of the CeO2 passivation layer, leaving behind nitrogen dangling bonds that were inefficient in restricting further oxidation of the Si surface, and hence a permanent dielectric breakdown happened at an electric field of 0.98 MV/cm. The CeO2 passivation layer annealed at 800°C broke down at 4.85 MV/cm and possessed relatively low Dit, Qeff, and slow trap density with negligible formation of interfacial layer, which promoted its use as a promising high k passivation layer.

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“…High-k interfacial layers are also known to improve the barrier properties through surface passivation. Investigations on several high-k dielectric oxide layers such as Al 2 O 3 , CeO 2 , La 2 O 3 , HfO 2 , TiO 2 , and Y 2 O 3 deposited on 4H-SiC has been reported [1], [16], [17]. Yttrium oxide (Y 2 O 3 ) among such dielectrics provides wide bandgap (5.5 eV) as well as high k = 15 − 18 [18].…”

mentioning

confidence: 99%

Enhanced Hole Transport in Ni/Y₂O₃/n-4H-SiC MOS for Self-Biased Radiation Detection

Chaudhuri

Karadavut

Kleppinger

et al. 2022

IEEE Electron Device Lett.

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We report the fabrication of novel self-biased high resolution radiation detectors achieved in n-type 4H-SiC metal-oxide-semiconductor (MOS) devices. Vertical MOS structure has been realized by pulsed laser deposition of 40 nm Y 2 O 3 layer on 20 μm n-type 4H-SiC epilayer followed by sputter coating a nickel gate, which revealed a record-high hole diffusion length. The MOS device exhibited a remarkable radiation detection response to 5486 keV alpha particles with a charge collection efficiency of 82% and an energy resolution of 72 keV full width at half maximum (FWHM) at zero applied bias. The hole diffusion length has been calculated to be 56 μm using a drift-diffusion model. Such long hole diffusion length and a flat-band potential of 2.1 V, enabled to attain high efficiency and resolution in the self-biased mode. Band energy calculations indicated that the presence of Y 2 O 3 layer may have neutralized the hole traps usually present in a metal-4H-SiC interface thereby substantially improving the hole transport. Such high performing self-biased radiation detectors fabricated on 4H-SiC are intended for applications in harsh environment space missions, wherein carrying detector power supplies as a payload becomes a critical logistic issue. The present study opens the high potential of other wide bandgap semiconductors as self-biased MOS devices as well. Index Terms-Epitaxial layers, pulsed laser deposition, MOS devices, radiation detectors, silicon carbide (4H-SiC), yttrium oxide (Y 2 O 3 ). I. INTRODUCTION4 H-SILICON CARBIDE has unique combination of physical properties such as excellent carrier transport properties, high breakdown voltage, high displacement threshold,

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High-kdielectrics for 4H-silicon carbide: present status and future perspectives

Abstract: Owing to its superior material and electrical properties such as wide bandgap and high breakdown electric field, 4H-silicon carbide (4H-SiC) has shown promise in high power, high temperature, and radiation...

Cited by 31 publications

References 135 publications

Photocurable Printed Piezocapacitive Pressure Sensor Based on an Acrylic Resin Modified with Polyaniline and Lignin

Photocurable Printed Piezocapacitive Pressure Sensor Based on an Acrylic Resin Modified with Polyaniline and Lignin

Effects of post‐deposition annealing of cerium oxide passivation layer in nitrogen‐oxygen‐nitrogen ambient

Enhanced Hole Transport in Ni/Y₂O₃/n-4H-SiC MOS for Self-Biased Radiation Detection

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