We present a GaAs-based VCSEL structure, BCB bonded to a Si 3 N 4 waveguide circuit, where one DBR is substituted by a free-standing Si 3 N 4 high-contrast-grating (HCG) reflector realized in the Si 3 N 4 waveguide layer. This design enables solutions for on-chip spectroscopic sensing, and the dense integration of 850-nm WDM data communication transmitters where individual channel wavelengths are set by varying the HCG parameters. RCWA shows that a 300nm-thick Si 3 N 4 HCG with 800nm period and 40% duty cycle reflects strongly (>99%) over a 75nm wavelength range around 850nm. A design with a standing-optical-field minimum at the III-V/airgap interface maximizes the HCG's influence on the VCSEL wavelength, allowing for a 15-nm-wide wavelength setting range with low threshold gain (<1000 cm -1 ).