2004
DOI: 10.1063/1.1644905
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High injection and carrier pile-up in lattice matched InGaAs/InP PN diodes for thermophotovoltaic applications

Abstract: This article analyzes and explains the observed temperature dependence of the forward dark current of lattice matched In0.53Ga0.47As on InP diodes as a function of voltage. The experimental results show, at high temperatures, the characteristic current-voltage (I–V) curve corresponding to leakage, recombination, and diffusion currents, but at low temperatures an additional region is seen at high fields. We show that the onset of this region commences with high injection into the lower-doped base region. The hi… Show more

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Cited by 10 publications
(6 citation statements)
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“…Whale and Cravalho (2002) demonstrated efficiency as a function of the band gap of In x Ga 1Àx As cells at different alloy compositions in a MTPV device. Ginige et al (2004) analysed the temperature dependence of the forward diode current in In 0.53 Ga 0.47 As cell. Recently, InGaAs TPV cells with band gap of 0.6 eV were used for space applications in radioisotope-fired TPV systems.…”
Section: Tpv Cell and Quantum Efficiencymentioning
confidence: 99%
“…Whale and Cravalho (2002) demonstrated efficiency as a function of the band gap of In x Ga 1Àx As cells at different alloy compositions in a MTPV device. Ginige et al (2004) analysed the temperature dependence of the forward diode current in In 0.53 Ga 0.47 As cell. Recently, InGaAs TPV cells with band gap of 0.6 eV were used for space applications in radioisotope-fired TPV systems.…”
Section: Tpv Cell and Quantum Efficiencymentioning
confidence: 99%
“…At these high light intensities, the maximum power voltage (see table 2) is in a region not dominated by 'shunting'. Examination of the dark IV characteristics shown in figure 1 indicates that the maximum power voltage is in a region where radiative recombination dominates over non-radiative recombination [6]. From this we conclude that this lower FF of the conventional cell to be due to lateral resistance in the emitter layer.…”
Section: Infra Red (Ir) Photovoltaic Characteristicsmentioning
confidence: 81%
“…2(a) and 2(b) we compare the dark current density, J -V and n -V of the SB-MQW with the LM diodes. The ideality for the LM diode is seen to be near "ideal," i.e., n = 1, for voltages between 0.25 and 0.5 V. The increase in n, observed at the higher voltages, is due to carrier "pileup" 7 giving rise to a pseudo n = 2 regime. For the SB-MQW different recombination mechanisms dominate at different voltages as the carrier density increases which in turn alters the extracted ideality factor.…”
Section: Characterization Of Bulk and Surface Currents In Strain-balamentioning
confidence: 86%