High-intensity laser for Ta and Ag implantation into different substrates for plasma diagnostics

Cutroneo, M.; Macková, Anna; Malínský, P.; Matoušek, Jindřich; Torrisi, L.; Ullschmied, J.

doi:10.1016/j.nimb.2014.11.082

Cited by 11 publications

(7 citation statements)

References 13 publications

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“…Its maximum concentration, of about 100%, is measured in the fi rst surface layers with a thickness of about 50 nm, indicating that a thin fi lm of gold is deposited due to neutral atoms and very low energetic ions emitted from plasma. RBS [11] shows that the concentration of the Au at 100 nm depth in silicon is of the order of 40 atm%; at 200 nm, the value falls to 20% and at 500 nm, the implantation is below 10% decreasing at about 0.05 atm% at about 1 micron depth, confi rming the implantation of Au ion occurred at high energy but at low concentration. The maximum energy of the Au ions is 4.5 MeV; in fact, this beam has a range of 1 micron in silicon, as calculable using SRIM code of Ziegler.…”

Section: Resultsmentioning

confidence: 93%

Multi-energy ion implantation from high-intensity laser

et al. 2016

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Abstract. The laser-matter interaction using nominal laser intensity above 10 15 W/cm 2 generates in vacuum non--equilibrium plasmas accelerating ions at energies from tens keV up to hundreds MeV. From thin targets, using the TNSA regime, plasma is generated in the forward direction accelerating ions above 1 MeV per charge state and inducing high-ionization states. Generally, the ion energies follow a Boltzmann-like distribution characterized by a cutoff at high energy and by a Coulomb-shift towards high energy increasing the ion charge state. The accelerated ions are emitted with the high directivity, depending on the ion charge state and ion mass, along the normal to the target surface. The ion fl uencies depend on the ablated mass by laser, indeed it is low for thin targets. Ions accelerated from plasma can be implanted on different substrates such as Si crystals, glassy-carbon and polymers at different fl uences. The ion dose increment of implanted substrates is obtainable with repetitive laser shots and with repetitive plasma emissions. Ion beam analytical methods (IBA), such as Rutherford backscattering spectroscopy (RBS), elastic recoil detection analysis (ERDA) and proton-induced X-ray emission (PIXE) can be employed to analyse the implanted species in the substrates. Such analyses represent 'off-line' methods to extrapolate and to character the plasma ion stream emission as well as to investigate the chemical and physical modifi cations of the implanted surface. The multi-energy and species ion implantation from plasma, at high fl uency, changes the physical and chemical properties of the implanted substrates, in fact, many parameters, such as morphology, hardness, optical and mechanical properties, wetting ability and nanostructure generation may be modifi ed through the thermal-assisted implantation by multi-energy ions from laser-generated plasma.

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Section: Resultsmentioning

confidence: 93%

Multi-energy ion implantation from high-intensity laser

et al. 2016

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“…The adopted configuration makes it possible to obtain high kinetic energy, charge states and a high dose of ions. This last was obtained by repeating (generally up to 12 times) the laser irradiation of the targets under the same experimental conditions, as presented in our previous experiment [31].…”

Section: Resultsmentioning

confidence: 99%

An unconventional ion implantation method for producing Au and Si nanostructures using intense laser-generated plasmas

Torrisi

Cutroneo

Macková

et al. 2016

Plasma Phys. Control. Fusion

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The present paper describes measurements of ion implantation by high-intensity lasers in an innovative configuration. The ion acceleration and implantation were performed using the target normal sheath acceleration regime. Highly ionized charged ions were generated and accelerated by the self-consistent electrostatic accelerating field at the rear side of a directly illuminated foil surface. A sub-nanosecond pulsed laser operating at an intensity of about 10 16 W cm −2 was employed to irradiate thin foils containing Au atoms. Multi-energy and multispecies ions with energies of the order of 1 MeV per charge state were implanted on exposed substrates of monocrystalline silicon up to a concentration of about 1% Au atoms in the first superficial layers.The target, laser parameters and irradiation conditions play a decisive role in the dynamic control of the characteristics of the ion beams to be implanted. The ion penetration depth, the depth profile, the integral amount of implanted ions and the concentration-depth profiles were determined by Rutherford back-scattering analysis. Ion implantation produces Si nanocrystals and Au nanoparticles and induces physical and chemical modifications of the implanted surfaces.

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“…Over the last 80 years, since the first polymer made of cellulose appeared at the International Exhibition in London, polymers have attracted the attention of the scientific community for their versatility and low cost. Ionizing radiation, including lasers [ 1 ], electron beams, ions, and inclusion of fillers, have been applied to modify the composition [ 2 ], structure, surface [ 3 ], optical [ 4 ], and electrical properties as well as density and porosity [ 5 ] of based polymers.…”

Section: Introductionmentioning

confidence: 99%

Overview of Polyethylene Terephthalate Foils Patterned Using 10 MeV Carbon Ions for Realization of Micromembranes

et al. 2023

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Polymer membranes are conventionally prepared using high-energy particles from radioactive decay or by the bombardment of hundreds of MeVs energy ions. In both circumstances, tracks of damage are produced by particles/ions passing through the polymer, and successively, the damaged material is removed by chemical etching to create narrow pores. This process ensures nanosized pore diameter but with random placement, leading to non-uniform local pore density and low membrane porosity, which is necessary to reduce the risk of their overlapping. The present study is focused on the use of polyethylene terephthalate (PET) foils irradiated by 10.0 MeV carbon ions, easily achievable with ordinary ion accelerators. The ion irradiation conditions and the chemical etching conditions were monitored to obtain customized pore locations without pore overlapping in PET. The quality, shape, and size of the pores generated in the micromembranes can have a large impact on their applicability. In this view, the Scanning Transmission Ion Microscopy coupled with a computer code created in our laboratory was implemented to acquire new visual and quantitative insights on fabricated membranes.

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High-intensity laser for Ta and Ag implantation into different substrates for plasma diagnostics

Cited by 11 publications

References 13 publications

Multi-energy ion implantation from high-intensity laser

Multi-energy ion implantation from high-intensity laser

An unconventional ion implantation method for producing Au and Si nanostructures using intense laser-generated plasmas

Overview of Polyethylene Terephthalate Foils Patterned Using 10 MeV Carbon Ions for Realization of Micromembranes

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