High-intensity terahertz pulses at 1-kHz repetition rate

Budiarto, E.; Margolies, J.; Jeong, Seongtae; Son, Joo‐Hiuk; Bokor, Jeffrey

doi:10.1109/3.538792

Cited by 132 publications

(90 citation statements)

References 18 publications

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“…15 Large aperture biased GaAs structures, operated at 1 kHz repetition rate, have produced on the order of 0.5 J/pulse. 16 Most other sources using either laser switched structures or optical rectification have operated at high frequency ͑10's of MHz͒ with W-mW level average power. The experiments reported in this paper have measured coherent radiation with energies near the 100 nJ/pulse level, in which the measured energy was limited primarily by the small collection angle (ϳ100 mrad) and the small transverse size (ϳ100 m) of the plasma.…”

Section: Introductionmentioning

confidence: 99%

Terahertz radiation from laser accelerated electron bunches

et al. 2004

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Coherent terahertz and millimeter wave radiation from laser accelerated electron bunches has been measured. The bunches were produced by tightly focusing (spot diameter ≈6 μm) a high peak power (up to 10 TW), ultra-short (⩾50 fs) laser pulse from a high repetition rate (10 Hz) laser system (0.8 μm), onto a high density (>1019 cm−3) pulsed gas jet of length ≈1.5 mm. As the electrons exit the plasma, coherent transition radiation is generated at the plasma-vacuum boundary for wavelengths long compared to the bunch length. Radiation in the 0.3–19 THz range and at 94 GHz has been measured and found to depend quadratically on the bunch charge. The measured radiated energy for two different collection angles is in good agreement with theory. Modeling indicates that optimization of this table-top source could provide more than 100 μJ/pulse. Together with intrinsic synchronization to the laser pulse, this will enable numerous applications requiring intense terahertz radiation. This radiation can also be used as a powerful tool for measuring the properties of laser accelerated bunches at the exit of the plasma accelerator. Preliminary spectral measurements indicates that bunches as short as 30–50 fs have been produced in these laser driven accelerators.

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Section: Introductionmentioning

confidence: 99%

Terahertz radiation from laser accelerated electron bunches

et al. 2004

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“…THz radiation with the strength up to hundreds of kV/cm [1,2]. However, it is difficult to further enhance the THz strength because the photoconductors are limited by material damage threshold and can not bear too high pump fields.…”

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confidence: 99%

Terahertz radiation by two-color lasers due to the field ionization of gases

Wang

Sheng

et al. 2013

Phys. Rev. E

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Terahertz (THz) radiation via the two-color laser scheme is investigated theoretically and numerically when the second laser is at different harmonic orders of the main laser. It is found that THz radiation can be generated only when the second laser is an even harmonic and the THz field strength does not show a simple scaling with the two laser amplitudes, suggesting that it is different from a nonlinear optics processes. The THz strength generally tends to decrease with the increase of the even harmonic order. The strength is also sensitive to the carrier envelope (CE) phases of both the two laser pulses even if their durations are quite long. With different CE phases, the strength can be proportional to either sine or cosine of the relative phase displacement of the two lasers. For a given gas target except hydrogen, it increases with the laser amplitude between several saturation plateaus, each corresponding to a different ionization level. For a given main laser intensity, there is an optimized intensity of the second laser for the strongest THz radiation.

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“…The gap b etween the two el ectro des i s general l y much sm al l er ( ¤ 1 0 ñ m) tha n the ra di ated sub-m i l li meter wa velengths, j usti fyi ng the di p ol ar appro xi m ati on, even i f qua drup ol ar term s i n the ra di ated Ùeld ha ve b een rep orted [76]. Neverthel ess, the di pol ar b ehavi or of the ra di ated Ùeld i s al so observed wi th wi de gap antenna e used i n powerf ul system s [77]. In the di p ol ar appro xi mati on, the far Ùeld radi ated by a ti m e-varyi ng di p ol e P ( t ) i s gi ven by the ti m e deri vati ve of the current J ( t ) Ûowi ng i n the swi tch…”

Section: T Hz Ant Ennaementioning

confidence: 99%

Semiconductor Materials for Ultrafast Photoswitches

Coutaz

2002

Acta Phys. Pol. A

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Pr oceed in gs o f t he XXX I I n t ern at io n al Sch oo l o f Sem icond uct i ng Co m p ou n ds, Ja szo wi ec 200 2 Sem i con d u cto r M ate ria l s for Ultrafas t P h otos w itch es J.-L. C out az L abo rato r y of M i crowa ves an d C hara cteri zati on , L A HC | Uni versi ty of Savo i e 73 376 Le Bo ur get du La c Cedex, Fra nce T h is pap er gives a revie w of semi conductor materia ls that are used to fabricate ultraf ast photosw itches . T he opto electrica l resp onse of the switches is Ùrst describ ed w ith simple mo dels, from which the material re quirements are deduced. T he basic princip les of the required material prop erties | ultrashort free carrier lif etime and high mobili t y, high dar k resistivi ty, and high Ùeld breakdow n | are explaine d. T hen, the most popular ultraf ast semiconductors are listed, together with their characteristics. A special emphasis is put on low -temp erature grow n GaA s. Finall y , two applicati on s of these ultraf ast materials are presented, namely antennae for terahert z radiation and all-opti cal nonlin ear devices. PAC S numb ers: 85.60.{q, 85. 60. Dw , 72.20. {i, 72. 40. + w , 72. 80. Ey, 42.65. Re I n t r o d u ct io nThe l aser exhi bi ts tw o rem ar kable features, among others, nam ely i ts l i ght b eam coherence and the p ossibi l ity o f pro duci ng very short l i ght pul ses.The coherence m akes the l aser l ig ht obeyi ng to the Po isson stati sti cs, l eadi ng to weak no ise i n the tra nsm i ssion of i nf orm atio n thro ug h opti cal m eans. Thi s consti tutes one of the bases of opti cal com muni catio ns, al l owi ng the i nsta l l ati on of l ong -di stance system s. Sho rt l i ght pul ses are used as bi ts of i nf orm atio n i n such system s. No wadays, sub-nano second l i ght pul ses comm onl y pro pa gate i n opti cal Ùbers, as top-l evel comm ercial systems are runni ng at 10{ 40 G bi t / s. In com p eti ti on wi th wa velength m ulti pl exing system s tha t al rea dy reach data ra tes of several Tbi t/ s [1], i t i s exp ected tha t ti me-multi plexi ng systems wi l l app ear i n a close future, carryi ng short pul ses corresp ondi ng to tra nsm ission ra tes hi gher tha n 100 G bi t/ s. Thi s re qui res detecto rs of l i ght who se band wi dth exceeds 100 G Hz, i .e. whose ti me response is of the order of a f ew pi coseconds. Beside the tel ecomm uni catio n dom ai n, whi ch certa i nl y consti tutes the mai n m ark et for such a techno l ogy, ul tra fast pho to detecto rs (4 95) 496 J .-L. Cout az are empl oyed i n man y areas of techno l ogy and physi cs, l i ke hi gh speed electro ni cs, tri ggeri ng of electro ni cs circui ts, opti cal l y-fed pha se-arra y ra dar antenna e, generati on of short electri cal events, antenna e for tera hertz spectro scopy .T oday, the most e£ cient l ight-electri city converters are semi conducto r (SC) devi ces. The absorpti on of i ncom i ng pho to ns exci tes electro ns fro m the val ence ba nd or fro m tra ps to the conducti on ba nd. Thi s pheno menon Ùrst creates a p opul ati o n of di p o...

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High-intensity terahertz pulses at 1-kHz repetition rate

Cited by 132 publications

References 18 publications

Terahertz radiation from laser accelerated electron bunches

Terahertz radiation from laser accelerated electron bunches

Terahertz radiation by two-color lasers due to the field ionization of gases

Semiconductor Materials for Ultrafast Photoswitches

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