High-isolation W-band MEMS switches

Rizk, J.; Tan, Guan-Leng; Muldavin, Jeremy; Rebeiz, Gabriel M.

doi:10.1109/7260.905952

Cited by 62 publications

(28 citation statements)

References 9 publications

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“…An example of high isolation W-band RF MEMS switches was reported by Rizk et al [30], employing electrostatically actuated capacitive membrane bridge-type structures. Here, a T-match design resulted in an ON state insertion loss of o0.9dB and an OFF state isolation of 418 dB, across the 75 to 110 GHz frequency range.…”

Section: Switchesmentioning

confidence: 99%

Review of radio frequency microelectromechanical systems technology

Lucyszyn

2004

IEE Proceedings - Science, Measurement and Technology

125

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A review of radio frequency microelectromechanical systems (RF MEMS) technology, from the perspective of its enabling technologies (e.g. fabrication, RF micromachined components and actuation mechanisms) is presented. A unique roadmap is given that shows how enabling technologies, RF MEMS components, RF MEMS circuits and RF microsystems packaging are linked together; leading towards enhanced integrated subsystems. An overview of the associated fabrication technologies is given, in order to distinguish between the two distinct classes of RF microsystems' component technologies; non-MEMS micromachined and true MEMS. An extensive literature survey has been undertaken and key papers have been cited; from these, the motivations behind different RF MEMS technologies are highlighted. The importance of understanding the limitations for realising new and innovative ideas in RF MEMS is discussed. Finally, conclusions are drawn as to where future RF MEMS technology may lead. It is likely that the switch will continue to be the most important RF MEMS component, with future work investigating its enhanced functionality, subsystem integration and volume production. The focus of RF MEMS circuits will shift from the digital phase shifter to high-Q tuneable filters.

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Section: Switchesmentioning

confidence: 99%

Review of radio frequency microelectromechanical systems technology

Lucyszyn

2004

IEE Proceedings - Science, Measurement and Technology

125

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“…Switch insertion loss and isolation of 0.1 dB and 30 dB, respectively, from 0-40 GHz have been demonstrated [7]. W-band operation has also been demonstrated [15] and cycle lifetimes are presently approaching 100 billion cold switching cycles [16].…”

Section: Introductionmentioning

confidence: 90%

Si-based RF MEMS components.

Stevens¹,

Nordquist²,

Baker³

et al. 2005

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Radio frequency microelectromechanical systems (RF MEMS) are an enabling technology for next-generation communications and radar systems in both military and commercial sectors. RF MEMS-based reconfigurable circuits outperform solid-state circuits in terms of insertion loss, linearity, and static power consumption and are advantageous in applications where high signal power and nanosecond switching speeds are not required. We have demonstrated a number of RF MEMS switches on high-resistivity silicon (high-R Si) that were fabricated by leveraging the volume manufacturing processes available in the Microelectronics Development Laboratory (MDL), a Class-1, radiation-hardened CMOS manufacturing facility. We describe novel tungsten and aluminum-based processes, and present results of switches developed in each of these processes. Series and shunt ohmic switches and shunt capacitive switches were successfully demonstrated. The implications of fabricating on high-R Si and suggested future directions for developing low-loss RF MEMS-based circuits are also discussed.

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“…The loss of the series switch is determined by the contact resistance, and for a contact resistance of 1-2 Ω, the loss is 0.1-0.2 dB. Another design is the capacitive switch which has been mostly used in the shunt topology at 10-110 GHz [6], [1]. The capacitive MEMS switch has an up-state capacitance of 30-100 fF and a capacitance ratio of 40-80, resulting in a down-state capacitance of 1.4-3.5 pF, and excellent isolation at 10 GHz and above.…”

Section: Introductionmentioning

confidence: 99%

Novel DC-Contact MEMS Shunt Switches and High-Isolation Series/Shunt Designs

Muldavin

Rebeiz

2001

2001 31st European Microwave Conference

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Abstract-This paper presents a metal-to-metal contact MEMS shunt switch suitable for DC-40 GHz applications. A novel pull-down electrode is used which applies the electrostatic force at the same location as the metal-to-metal contact area. A contact resistance of 0.15 − 0.35 Ω is repeatably achieved, and results in an isolation of −40 dB at 0.1-3 GHz. The measured isolation is still better than −20 dB at 40 GHz. The DC-contact shunt switch is used in a series/shunt design to result in −60 dB isolation at 5 GHz and better than −40 dB up to 40 GHz. The application areas are in highisolation/low-loss switches for telecommunication and radar systems.

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High-isolation W-band MEMS switches

Cited by 62 publications

References 9 publications

Review of radio frequency microelectromechanical systems technology

Review of radio frequency microelectromechanical systems technology

Si-based RF MEMS components.

Novel DC-Contact MEMS Shunt Switches and High-Isolation Series/Shunt Designs

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