High-K Candidates for Use as the Gate Dielectric in Silicon Mosfets

Schlom, Darrell G.; Billman, C.; Haeni, J. H.; Lettieri, J.; Tan, Peng; Held, R.; Völk, Stefan; Hubbard, K. J.

doi:10.1007/0-387-26089-7_2

Cited by 22 publications

(12 citation statements)

References 150 publications

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“…(b) Rocking curves and FWHM of a commercial BaTiO 3 single crystal and an epitaxial 1000‐Å‐thick BaTiO 3 film grown on a (110) GdScO 3 substrate by MBE at 650°C under biaxial compression of ɛ s =−1.0%. (From Schlom et al 345 )…”

Section: Integration Of Oxidesmentioning

confidence: 96%

“… A number line showing the pseudotetragonal or pseudocubic a ‐axis lattice constants in angstroms of some perovskites and perovskite‐related phases of current interest (above the number line) and of some of the perovskite and perovskite‐related substrates that are available commercially (below the number line). (Adapted from Schlom et al 345 ) …”

Section: Integration Of Oxidesmentioning

confidence: 99%

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A Thin Film Approach to Engineering Functionality into Oxides

Schlom

Chen

Pan

et al. 2008

Journal of the American Ceramic Society

489

358

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The broad spectrum of electronic and optical properties exhibited by oxides offers tremendous opportunities for microelectronic devices, especially when a combination of properties in a single device is desired. Here we describe the use of reactive molecular‐beam epitaxy and pulsed‐laser deposition to synthesize functional oxides, including ferroelectrics, ferromagnets, and materials that are both at the same time. Owing to the dependence of properties on direction, it is often optimal to grow functional oxides in particular directions to maximize their properties for a specific application. But these thin film techniques offer more than orientation control; customization of the film structure down to the atomic‐layer level is possible. Numerous examples of the controlled epitaxial growth of oxides with perovskite and perovskite‐related structures, including superlattices and metastable phases, are shown. In addition to integrating functional oxides with conventional semiconductors, standard semiconductor practices involving epitaxial strain, confined thickness, and modulation doping can also be applied to oxide thin films. Results of fundamental scientific importance as well as results revealing the tremendous potential of utilizing functional oxide thin films to create devices with enhanced performance are described.

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Section: Integration Of Oxidesmentioning

confidence: 96%

Section: Integration Of Oxidesmentioning

confidence: 99%

A Thin Film Approach to Engineering Functionality into Oxides

Schlom

Chen

Pan

et al. 2008

Journal of the American Ceramic Society

489

358

View full text Add to dashboard Cite

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“…[5][6][7][8][9] Among binary rare earth oxides, interlanthanide oxides have been reported to have thermodynamically stable interfaces with Si and higher k-value. 10,11 To this end, we have identified lanthanide compound LGO in the ceramic form as a promising high-k dielectric material in terms of its linear, highk value with low leakage current.…”

mentioning

confidence: 99%

“…The polarizability of La þ3 , Gd þ3 , and O À2 was chosen as 6.07Å 3 , 4.37 Å 3 , and 2.01 Å 3 , respectively, from Shannon's table. 11,18 The molar volume was calculated using LGO lattice parameters reported by Wang et al 12 Such a high dielectric constant of LaGdO 3 is of great interest for the electronic industry. Hence, here we report the dielectric properties of LGO ceramics in a broad range of frequency and temperature and its leakage conduction mechanism.…”

mentioning

confidence: 99%

Dielectric properties and electrical conduction of high-k LaGdO3 ceramics

Pavunny¹,

Thomas²,

Kumar³

et al. 2012

Journal of Applied Physics

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The temperature and frequency dependent dielectric properties and leakage conduction mechanism in LaGdO3 (LGO) ceramics have been studied, and this material has been identified as a potential high-k candidate for the future complementary metal-oxide-semiconductor (CMOS) and dynamic random access memory (DRAM) technology nodes. The dielectric constant and the loss tangent at 100 kHz were ∼21.5 and ∼0.003, respectively, at ambient conditions without any significant temperature and voltage dependence. The ac conductivity shows the typical features of universal dynamic response (UDR) and obey the double power law σac=σdc+Aωn1+Bωn2 with three types of temperature dependent conduction processes involved; (i) a dc plateau (< 3 kHz) due to long range translational hopping, (ii) a mid frequency region due to the short range hopping (3–100 kHz), and (iii) a high frequency region due to localized or reorientational hopping (100–1000 kHz). The temperature dependent dc conductivity follows the Arrhenius relation with activation energies of 0.05 eV in the 200–400 K range and 0.92 eV in the 400–600 K range. The leakage current behavior reveals bulk limited Poole-Frenkel (PF) conduction mechanism and the estimated optical dielectric constant (ɛ∞) is 3.6.

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“…4,5 Lanthanum lutetium oxide ͑LaLuO 3 ͒, as a member of this class of ternary oxides, is predicted to have similar properties. 3,7 Experimental data related to high-gate applications of amorphous LaLuO 3 films are, however, still not available. In this letter, we present the results of a systematic study on the microstructural and electrical properties of amorphous LaLuO 3 thin films, deposited on silicon substrates by means of pulsed laser deposition ͑PLD͒.…”

mentioning

confidence: 99%

Amorphous lanthanum lutetium oxide thin films as an alternative high-κ gate dielectric

Lopes

Roeckerath

Heeg

et al. 2006

Applied Physics Letters

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Lanthanum lutetium oxide thin films were grown on ͑100͒ Si by pulsed laser deposition. Rutherford backscattering spectrometry, atomic force microscopy, x-ray diffraction, and x-ray reflectometry were employed to investigate the samples. The results indicate the growth of stoichiometric and smooth LaLuO 3 films that remain amorphous up to 1000°C. Internal photoemission and photoconductivity measurements show a band gap width of 5.2± 0.1 eV and symmetrical conduction and valence band offsets of 2.1 eV. Capacitance and leakage current measurements reveal C-V curves with a small hysteresis, a dielectric constant of Ϸ32, and low leakage current density levels. © 2006 American Institute of Physics. ͓DOI: 10.1063/1.2393156͔The study of ultrathin gate dielectrics has recently gained great attention due to the technological need to replace SiO 2 films in metal-oxide-semiconductor field-effect transistors ͑MOSFETs͒. 1 The scaling has led to MOSFETs with ultrashort physical gate lengths ͑Ͻ50 nm͒ and insulating SiO 2 -based films with thickness less than 1 nm. At such a thickness, these films suffer from excessively high leakage of charge carriers and poor reliability with respect to dielectric breakdown. Therefore, to overcome these limitations new gate dielectric materials with a higher dielectric constant must be developed to replace the SiO 2 . According to the International Technology Roadmap for Semiconductors, 2 the implementation of high-gate dielectrics with a dielectric constant between 10 and 20 will be required by 2008, which will later be replaced by materials having a larger than 20, in order to meet both low leakage current density and performance requirements.Ternary rare earth oxides ͑e.g., DyScO 3 and GdScO 3 ͒ are emerging as promising candidates for high-applications. As shown by Schlom and Haeni, 3 single crystals of these oxides show values of 20-35 which were also observed for amorphous LaScO 3 , GdScO 3 , and DyScO 3 films deposited on silicon ͑ =22-23͒. 4,5 In addition, these materials fulfill the requirements for large optical band gaps ͑5.6 eV͒ and band offsets ͑2 -2.5 eV͒, 6 while their amorphous phase is stable up to 1000°C ͑for GdScO 3 and DyScO 3 ͒. 4,5 Lanthanum lutetium oxide ͑LaLuO 3 ͒, as a member of this class of ternary oxides, is predicted to have similar properties. 3,7 Experimental data related to high-gate applications of amorphous LaLuO 3 films are, however, still not available. In this letter, we present the results of a systematic study on the microstructural and electrical properties of amorphous LaLuO 3 thin films, deposited on silicon substrates by means of pulsed laser deposition ͑PLD͒.LaLuO 3 films were deposited by PLD using a stoichiometric ceramic target. The target was made by milling a stoichiometric mixture of Lu 2 O 3 ͑Alfa Aesar, 99.99%͒ and La 2 O 3 ͑Alfa Aesar, 99.999%͒ powders with a molar ratio of 1:1. The ground powder was dried and then fired at 1300°C in air for 12 h. After regrinding, the powder was pressed with a uniaxial press ͑3 tons͒. The pellets were the...

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High-K Candidates for Use as the Gate Dielectric in Silicon Mosfets

Cited by 22 publications

References 150 publications

A Thin Film Approach to Engineering Functionality into Oxides

A Thin Film Approach to Engineering Functionality into Oxides

Dielectric properties and electrical conduction of high-k LaGdO3 ceramics

Amorphous lanthanum lutetium oxide thin films as an alternative high-κ gate dielectric

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