High-K metal gate stacks with ultra-thin interfacial layers formed by low temperature microwave-based plasma oxidation

Czernohorsky, M.; Seidel, Konrad; Kühnel, Kati; Niess, J.; Sacher, N.; Kegel, W. H.; Lerch, W.

doi:10.1016/j.mee.2017.05.041

Cited by 12 publications

(3 citation statements)

References 5 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In the case of Mg, Al and Si, the absence of M-M signals (M=Mg, Al, Si) in the XPS spectra of the reduced samples (Table 2, Figures S1-S3) was verified. In the case of Si and Mg, only signals attributed to Mg-O, at 50.0 eV, and Si-O, around 103.5-103.7, were observed [45,46]. Instead, signals that can be assigned to both Al-O and Al-OH were observed in Cu/Al 2 O 3 -I and CuMgAl samples [45].…”

Section: Physicochemical Characterizationmentioning

confidence: 97%

A Stable and Reusable Supported Copper Catalyst for the Selective Liquid-Phase Hydrogenation of 5-Hydroxymethylfurfural to 2,5-Bis(hydroxymethyl)furan

et al. 2022

View full text Add to dashboard Cite

Synthesis of 2,5-bis(hydroxymethyl)furan (BHMF) by selective 5-hydroxymethylfurfural (HMF) hydrogenation is ecofriendly and industrially important since HMF is obtained from renewable sources, and BHMF is a raw material used for production of biodegradable polymers. Four copper-based catalysts were prepared by incipient wetness impregnation (Cu/SiO2-I, Cu/Al2O3-I), precipitation–deposition (Cu/SiO2-PD) and coprecipitation (CuMgAl), and then tested in the liquid-phase hydrogenation of HMF. Metallic phases with large copper particles were obtained by incipient wetness impregnation, while precipitation methods gave highly dispersed metal copper nanoparticles. The pattern found for the concentration and strength of surface acid sites was: CuMgAl > Cu/Al2O3-I > Cu/SiO2-PD > Cu/SiO2-I. The copper-based catalysts active in HMF hydrogenation are all highly selective to BHMF, but the intrinsic activity and stability depend on metallic copper dispersion and support nature. The catalyst stability becomes poorer in the cases that the metallic phase is formed by large copper particles or interacts with high-acidity supports. Therefore, the catalyst with the highest activity, BHMF yield and stability was Cu/SiO2-PD. Furthermore, it was found that Cu/SiO2-PD is reusable in the selective liquid-phase HMF hydrogenation after being submitted to a two-step thermal treatment: (1) calcination under air flow at 673 K; (2) reduction under H2 flow at 523 K.

show abstract

Section: Physicochemical Characterizationmentioning

confidence: 97%

A Stable and Reusable Supported Copper Catalyst for the Selective Liquid-Phase Hydrogenation of 5-Hydroxymethylfurfural to 2,5-Bis(hydroxymethyl)furan

et al. 2022

View full text Add to dashboard Cite

show abstract

“…This can be avoided using the microwave-based plasma oxidation technique operating at temperatures <400 • C [61,62]. Plasma oxidation provides oxides of up to ∼8 nm in thickness and high electrical quality [63,64] at reasonable oxidation times of some minutes. In collaboration with the company HQ Dielectrics GmbH (HQ-D), experiments were carried out with the HQ-D Hyperion LT tool [65] (suitable for processing up to ⊘ 300 mm wafers) to qualify the plasma process for the oxidation of NPs.…”

Section: Np Shrinkage Technologymentioning

confidence: 99%

CMOS-compatible manufacturability of sub-15 nm Si/SiO₂/Si nanopillars containing single Si nanodots for single electron transistor applications

Borany

Engelmann

Heinig

et al. 2023

Semicond. Sci. Technol.

View full text Add to dashboard Cite

This study addresses the complementary metal-oxide-semiconductor (CMOS)-compatible fabrication of vertically stacked Si/SiO2/Si nanopillars with embedded Si nanodots as key functional elements of a quantum-dot-based, gate-all-around single-electron transistor (SET) operating at room temperature. The main geometrical parameters of the nanopillars and nanodots were deduced from SET device simulations using the nextnano++ program package. The basic concept for single silicon nanodot formation within a confined oxide volume was deduced from Monte-Carlo simulations of ion-beam mixing and SiOx phase separation. A process flow was developed and experimentally implemented by combining bottom-up (Si nanodot self-assembly) and top-down (ion-beam mixing, electron-beam lithography, reactive ion etching) technologies, fully satisfying process requirements of future 3D device architectures. The theoretically predicted self-assembly of a single Si nanodot via phase separation within a confined SiOx disc of < 500 nm³ volume was experimentally validated. This work describes in detail the optimization of conditions required for nanopillar/ nanodot formation, such as the oxide thickness, energy and fluence of ion-beam mixing, thermal budget for phase separation and parameters of reactive ion beam etching. Low-temperature plasma oxidation was used to further reduce nanopillar diameter and for gate oxide fabrication whilst preserving the pre-existing nanodots. The influence of critical dimension variability on the SET functionality and options to reduce such deviations are discussed. We finally demonstrate the reliable formation of Si quantum dots with diameters of less than 3 nm in the oxide layer of a stacked Si/SiO2/Si nanopillar of 10 nm diameter, with tunnelling distances of about 1 nm between the Si nanodot and the neighboured Si regions forming drain and source of the single-electron transistor.

show abstract

“…The 28 nm high-K metal gate technology consists of TiN (8 nm), HfO2 (10 nm), and SiON (1.2 nm) [37]. Additionally, the ultra-thin SiON layer in the highk metal gate technology can also be an ultra-thin SiO2 layer [38]. Based on this information, two Geant4 Monte Carlo simulation models were developed to examine the influence of The cross sections of 178 Hf interacting with eV-level neutrons are remarkably high, reaching 10 5 barns when compared to high-energy neutrons.…”

Section: Monte Carlo Simulationmentioning

confidence: 99%

Neutron Irradiation Testing and Monte Carlo Simulation of a Xilinx Zynq-7000 System on Chip

Yang

et al. 2023

Electronics

View full text Add to dashboard Cite

The reliability of nanoscale electronic systems is important in various applications. However, they are becoming increasingly vulnerable to atmospheric neutrons. This research conducted spallation neutron irradiations on a Xilinx Zynq-7000 system on a chip using the China Spallation Neutron Source. The results were analyzed in combination with a Monte Carlo simulation to explore the impact of atmospheric neutrons on the single event effects of the target system on chip. Meanwhile, the contribution of thermal neutrons to the chip’s single event effect susceptibility was also assessed. It was found that absorbing thermal neutrons with a 2 mm Cd sheet can protect against the single event effect on the system on the chip by about 44.4%. The effects of B and Hf elements, inside the device, on a single event effect of the Xilinx Zynq-7000 system on chip were evaluated too. Additionally, it was discovered that 10B interacting with thermal neutrons was the primary cause of the thermal neutron-induced single event effect in the system on chip. Although Hf has a high neutron capture cross section, its presence does not significantly affect the sensitivity to single event effects. However, during atmospheric neutron irradiation, the presence of Hf increases the possibility of depositing the total dose in the tested chip.

show abstract

High-K metal gate stacks with ultra-thin interfacial layers formed by low temperature microwave-based plasma oxidation

Cited by 12 publications

References 5 publications

A Stable and Reusable Supported Copper Catalyst for the Selective Liquid-Phase Hydrogenation of 5-Hydroxymethylfurfural to 2,5-Bis(hydroxymethyl)furan

A Stable and Reusable Supported Copper Catalyst for the Selective Liquid-Phase Hydrogenation of 5-Hydroxymethylfurfural to 2,5-Bis(hydroxymethyl)furan

CMOS-compatible manufacturability of sub-15 nm Si/SiO₂/Si nanopillars containing single Si nanodots for single electron transistor applications

Neutron Irradiation Testing and Monte Carlo Simulation of a Xilinx Zynq-7000 System on Chip

Contact Info

Product

Resources

About

High-K metal gate stacks with ultra-thin interfacial layers formed by low temperature microwave-based plasma oxidation

Cited by 12 publications

References 5 publications

A Stable and Reusable Supported Copper Catalyst for the Selective Liquid-Phase Hydrogenation of 5-Hydroxymethylfurfural to 2,5-Bis(hydroxymethyl)furan

A Stable and Reusable Supported Copper Catalyst for the Selective Liquid-Phase Hydrogenation of 5-Hydroxymethylfurfural to 2,5-Bis(hydroxymethyl)furan

CMOS-compatible manufacturability of sub-15 nm Si/SiO2/Si nanopillars containing single Si nanodots for single electron transistor applications

Neutron Irradiation Testing and Monte Carlo Simulation of a Xilinx Zynq-7000 System on Chip

Contact Info

Product

Resources

About

CMOS-compatible manufacturability of sub-15 nm Si/SiO₂/Si nanopillars containing single Si nanodots for single electron transistor applications