The microstructural, optical and electrical properties of Si-, Ge-and Sn-implanted silicon dioxide layers were investigated. It was found, that these layers exhibit strong photoluminescence (PL) around 2.7 eV (Si) and between 3 and 3.2 eV (Ge, Sn) at room temperature (RT), which is accompanied by an UV emission around 4.3 eV. This PL is compared with that of Ar-implanted silicon dioxide and that of Si-and Ge-rich oxide made by rf magnetron sputtering. Based on PL and PL excitation (PLE) spectra we tentatively interpret the blue-violet PL as due to a T 1 → S 0 transition of the neutral oxygen vacancy typical for Si-rich SiO 2 and similar Ge-or Sn-related defects in Ge-and Sn-implanted silicon dioxide. The differences between Si, Ge and Sn will be explained by means of the heavy atom effect. For Geimplanted silicon dioxide layers a strong electroluminescence (EL) well visible with the naked eye and with a power efficiency up to 5 × 10 −4 was achieved. The EL spectrum correlates very well with the PL one. Whereas the EL intensity shows a linear dependence on the injection current over three orders of magnitude, the shape of the EL spectrum remains unchanged. The I − V dependence exhibiting the typical behavior of Fowler-Nordheim tunneling shows an increase of the breakdown voltage and the tunnel current in comparison to the unimplanted material. Finally, the suitability of Ge-implanted silicon dioxide layers for optoelectronic applications is briefly discussed. 78.60.F; 78.55; 61.72.T; 85.30.T; 78.66.J Since the early 60s Si has been the dominating material of microelectronics because of its excellent mechanical, chemical and electrical properties. However, with increasing miniaturization one approaches more and more the physical limits drawn by the material properties of Si. The increase of the line resistance and the corresponding parasitic capacitors with decreasing feature size is opposed to a further miniaturization and an enhancement of the clock rate. The PACS:

In the last decade, transition metal doped ZnO has been intensively investigated as a route to room temperature diluted magnetic semiconductors (DMS). However the origin for the reported ferromagnetism in ZnO based DMS remains questionable. Possible options are diluted magnetic semiconductors, spinodal decomposition or secondary phases. In order to clarify this question, we have performed a thorough characterization of the structural and magnetic properties of Co and Ni implanted ZnO single crystals. Our measurements reveal that Co or Ni nanocrystals (NCs) are the major contribution of the measured ferromagnetism. Already in the as-implanted samples, Co or Ni NCs have formed, and they exhibit superparamagnetic properties. The Co or Ni NCs are crystallographically oriented with respect to the ZnO matrix. Their magnetic properties, e.g. the anisotropy and the superparamagnetic blocking temperature can be tuned by annealing. We discuss the magnetic anisotropy of Ni NCs embedded in ZnO concerning the strain anisotropy.

The photoluminescence (PL) and electroluminescence (EL) properties of Ge-implanted SiO2 layers thermally grown on a Si substrate were investigated and compared to those of Si-implanted SiO2 films. The PL spectra from Ge-implanted SiO2 were recorded as a function of annealing temperature. It was found that the blue-violet PL from Ge-rich oxide layers reaches a maximum after annealing at 500 °C for 30 min, and is substantially more intense than the PL emission from Si-implanted oxides. The neutral oxygen vacancy is believed to be responsible for the observed luminescence. The EL spectrum from the Ge-implanted oxide after annealing at 1000 °C correlates very well with the PL one, and shows a linear dependence on the injected current. The EL emission was strong enough to be readily seen with the naked eye and the EL efficiency was assessed to be about 5×10−4.

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We report on the fabrication of pseudomorphic wurtzite Ga1−xMnxN grown on GaN with Mn concentrations up to 10% using molecular beam epitaxy. According to Rutherford backscattering, the Mn ions are mainly at the Ga-substitutional positions, and they are homogeneously distributed according to depth-resolved Auger-electron spectroscopy and secondary-ion mass-spectroscopy measurements. A random Mn distribution is indicated by transmission electron microscopy, and no Mn-rich clusters are present for optimized growth conditions. A linear increase of the c-lattice parameter with increasing Mn concentration is found using x-ray diffraction. The ferromagnetic behavior is confirmed by superconducting quantum-interference measurements showing saturation magnetizations of up to 150 emu/cm3.